A 19.9%-efficient ultrathin solar cell based on a 205-nm-thick GaAs absorber and a silver nanostructured back mirror

HL Chen, A Cattoni, R De Lépinau, AW Walker… - Nature Energy, 2019 - nature.com
Conventional photovoltaic devices are currently made from relatively thick semiconductor
layers,~ 150 µm for silicon and 2–4 µm for Cu (In, Ga)(S, Se) 2, CdTe or III–V direct bandgap …

Ultra‐thin GaAs solar cells with nanophotonic metal‐dielectric diffraction gratings fabricated with displacement Talbot lithography

L Sayre, E Camarillo Abad, P Pearce… - Progress in …, 2022 - Wiley Online Library
Ultra‐thin photovoltaics enable lightweight flexible form factors, suitable for emerging
terrestrial applications such as electric vehicle integration. These devices also exhibit …

Analysis of Potential-Induced Degradation in Soda-Lime Glass and Borosilicate-Glass Cu(In,Ga)Se2 Samples

MC Alonso-Garcia, P Hacke, S Glynn… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
Potential-induced degradation (PID) is investigated in small-size Cu (In, Ga) Se 2 (CIGS)
submodules of individual cells. Samples with conventional soda-lime glass (SLG) and low …

Record-high solar-to-hydrogen conversion efficiency based on a monolithic all-silicon triple-junction IBC solar cell

S Nordmann, B Berghoff, A Hessel, B Zielinsk… - Solar Energy Materials …, 2019 - Elsevier
We present a record-high solar-to-hydrogen conversion efficiency (STH) for monolithic all-
silicon multi-junction solar devices. The device is based on an interdigitated back-contact …

Triangular shape geometry in a Solarus AB concentrating photovoltaic-thermal collector

L Marques, JPN Torres, PJC Branco - International Journal on Interactive …, 2018 - Springer
Solar Energy can be used in various ways: there are solar collectors to heat water and air,
photovoltaic panels that produce electricity and PVT collectors (Photovoltaic Thermal …

Coupled In Situ Electrical and Optical Characterization to Assess the Accelerated Aging of Perovskite Solar Cells

A Levtchenko, A Julien, D McDermott, JB Puel… - Solar …, 2024 - Wiley Online Library
While perovskite (PVK)‐based solar cells exhibit excellent efficiencies and require a
relatively simple synthesis process, stability issues during operation severely limit their …

Effects of aluminum in metallization paste on the electrical losses in bifacial N-type crystalline silicon solar cells

T Aoyama, M Aoki, I Sumita, Y Yoshino, A Ogura - Energy Procedia, 2016 - Elsevier
Abstract Silver/aluminum (Ag/Al) paste has been used as metallization for p+ emitter of n-
type solar cells. Nevertheless, the Ag/Al paste induces junction current leakage or shunting …

Characterization of glass frit in conductive paste for N-type crystalline silicon solar cells

T Aoyama, M Aoki, I Sumita, Y Yoshino… - IEEE Journal of …, 2017 - ieeexplore.ieee.org
Contacting silver paste for an emitter of silicon solar cells has been pointed out to create
shunting and to increase carrier recombination due to silver-crystallites at the emitter …

Ultra-thin single-junction GaAs solar cells for extreme space environments

L Sayre, F Lang, J Bundesmann… - 2020 47th IEEE …, 2020 - ieeexplore.ieee.org
Ultra-thin (less than 100 nm) photovoltaics for space power applications are proposed due
to their intrinsic radiation tolerance [1]. They are a potentially enabling technology for space …

Carrier dynamics and recombination in silicon doped InAs/GaAs quantum dot solar cells with AlAs cap layers

S Kondratenko, O Kozak, S Rozouvan… - Semiconductor …, 2020 - iopscience.iop.org
The effects of doping InAs quantum dots (QDs) with Si on charge carrier dynamics and
recombination in the InAs/GaAs QD solar cells (QDSCs) with AlAs cap layers was …