Temperature-dependent efficiency droop in GaN-based blue micro light-emitting diodes

Temperature-Induced Stress Performance of High-Density GaN Micro-LED Arrays for Industrial Mass Production

EJ Youn, TK Kim, ABMH Islam, J Kim… - ACS Applied …, 2024 - ACS Publications
The high-temperature-induced stress performance of GaN-based blue micro light emitting-
diode (micro-LED) arrays with a pixel size of 5× 5 μm2 (6 μm pitch) is studied, and …
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Enhanced size-dependent efficiency of InGaN/AlGaN near-ultraviolet micro-LEDs

ABMH Islam, TK Kim, YJ Cha, J Yun, JO Song… - Applied Physics …, 2025 - pubs.aip.org
This study presents an approach for enhancing the external quantum efficiency (EQE) of
multiple-quantum-well InGaN/AlGaN near-ultraviolet (NUV) micro-light-emitting diodes …
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Internal piezoelectric field and Auger recombination in InGaN/GaN quantum wells: impact on device performance

D Samosvat, A Karpova, G Zegrya - Applied Physics A, 2025 - Springer
This paper is devoted to studying the internal quantum efficiency (IQE) of blue and green
LEDs based on InGaN/GaN heterostructures in dependence on the following parameters …
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