The structural, optical, magnetic and photocatalytic properties of transition metal ions doped TiO2 nanoparticles
MM Rashad, EM Elsayed, MS Al-Kotb… - Journal of Alloys and …, 2013 - Elsevier
Metal-ions doped TiO 2 (M–TiO 2) have been synthesized using a hydrothermal method at
100° C with a post-annealing temperature process at 500° C, including individual Co 2+ …
100° C with a post-annealing temperature process at 500° C, including individual Co 2+ …
Evaluating ovonic threshold switching materials with topological constraint theory
The physical properties of ovonic threshold switching (OTS) materials are of great interest
due to the use of OTS materials as selectors in cross-point array nonvolatile memory …
due to the use of OTS materials as selectors in cross-point array nonvolatile memory …
Formation of heavily boron-doped hydrogenated polycrystalline germanium thin films by co-sputtering for developing p+ emitters of bottom cells
Properties of heavily boron-doped hydrogenated polycrystalline germanium (Ge) films
sputter-deposited on glass are investigated for developing p+ emitters of the bottom cells of …
sputter-deposited on glass are investigated for developing p+ emitters of the bottom cells of …
Improved surface quality of the metal-induced crystallized Ge seed layer and its influence on subsequent epitaxy
K Toko, K Nakazawa, N Saitoh… - Crystal Growth & …, 2015 - ACS Publications
Al-induced crystallized Ge (AIC-Ge) seeded epitaxy is a promising way to fabricate
functional materials on amorphous substrates such as glass or polymer sheets. However …
functional materials on amorphous substrates such as glass or polymer sheets. However …
Studies on B-doping during low-temperature growth of nc-Ge thin films via PECVD to mitigate unwanted conduction characteristics from the post-deposition oxygen …
Post-deposition O absorption is a common issue in low-temperature grown nc-Ge films, that
makes the material unstable and induces high n-type electrical conductivity∼ 10− 2 S cm …
makes the material unstable and induces high n-type electrical conductivity∼ 10− 2 S cm …
Flash-lamp-induced explosive crystallization of amorphous germanium films leaving behind periodic microstructures
K Ohdaira, H Matsumura - Thin Solid Films, 2012 - Elsevier
Flash lamp annealing (FLA) can induce the explosive crystallization (EC) of micrometer-
order-thick amorphous germanium (a-Ge) films. This EC leaves behind periodic …
order-thick amorphous germanium (a-Ge) films. This EC leaves behind periodic …
Effect of copper-induced crystallization on structural, morphological, optical, and electrical properties of thin germanium films
G Singh, D Gupta, S Aggarwal - Optical Materials, 2025 - Elsevier
The present study explores the Copper (Cu)-induced crystallization of amorphous
germanium (Ge) films deposited on glass substrate using RF sputtering. The impact of post …
germanium (Ge) films deposited on glass substrate using RF sputtering. The impact of post …
[HTML][HTML] A scalable, resource-efficient process for synthesis of self-supporting germanium nanomembranes
The design of self-supporting membranes is gaining high interest in a broad range of
applications, from nanodevices, optoelectronics, sensing, separation, and catalysis. In this …
applications, from nanodevices, optoelectronics, sensing, separation, and catalysis. In this …
Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n-and p-type doping for device applications
Y An, K Qian, J Jiao, S Wu, J Qian, Q Wu… - Journal of Alloys and …, 2024 - Elsevier
A metal-induced crystallization (MIC) doping method is proposed for the fabrication of n-and
p-type doping polycrystalline germanium (poly-Ge). This method involves the use of …
p-type doping polycrystalline germanium (poly-Ge). This method involves the use of …
Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization
N Oya, K Toko, N Saitoh, N Yoshizawa… - Applied physics …, 2014 - pubs.aip.org
The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible
polyimide film via the low-temperature crystallization (325 C) of amorphous Ge using Al as a …
polyimide film via the low-temperature crystallization (325 C) of amorphous Ge using Al as a …