Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …

The authors report the dependence of the quantum efficiency on device thickness of type-II
In As∕ Ga Sb superlattice photodetectors with a cutoff wavelength around 12 μ m⁠. The …

GaSb-based heterostructures are tested as candidates for a hot carrier solar cell absorber.
Their thermalisation properties are investigated using continuous wave photoluminescence …

The rise of black phosphorus (BP) as a new family member of two‐dimensional (2D)
materials brings new concepts and applications to the field, because of the infrared band …

Black phosphorus has attracted interest as a material for use in optoelectronic devices due
to many favorable properties such as a high carrier mobility, field-effect, and a direct …

In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice
mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used …

Direct epitaxial growth of III-V materials on complementary metal-oxide-semiconductor
(CMOS)-compatible Si substrates has long been a scientific and engineering problem for …

Abstract Strain balanced InAs/GaSb type-II superlattice structures have been grown using
molecular beam epitaxy. InSb like interfaces have been introduced at both InAs on GaSb …

We combine quantitative analyses of Z-contrast images with composition analyses
employing atom probe tomography (APT) correlatively to provide a quantitative …