The LO-phonon–hole-plasmon coupling is investigated for p-type III-V semiconductors. Due
to a large carrier damping, only one coupled LO-phonon–plasmon mode (CPPM) appears …

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic
devices. One of the critical issues in NWs is the control of impurity doping for the formation of …

The unambiguous measurement of carrier concentration and mobility in semiconductor
nanowires remains a challenging task. This is a consequence of their one-dimensional …

We have measured the room-temperature Raman spectra of the coupled LO-phonon–
damped-hole-plasmon modes of ten p-type, Be-doped, molecular-beam-epitaxy-grown …

We demonstrate an all optical approach that can surprisingly offer the possibility of yielding
much more information than one would expect, pertinent to the carrier recombination …

A measurement of the hole density in the ferromagnetic semiconductor Ga 1− x Mn x As is
notoriously difficult using standard transport techniques due to the dominance of the …

A bstract We study the dynamics and the relaxation of bulk plasmons in strongly coupled
and quantum critical systems using the holographic framework. We analyze the dispersion …

The lattice vibrational properties of new semiconductor alloys, GaAs 1− x Bi x and InAs 1− x
Bi x, are reported. These alloys, which were grown by metalorganic vapor phase epitaxy …

The ultrafast coupling dynamics of coherent optical phonons and the photoexcited electron-
hole plasma in the indirect gap semiconductor GaP are investigated by experiment and …

GaAsBi alloys are potential candidates for near-infrared optoelectronic applications, such as
light-emitting diodes, laser diodes, avalanche photodiodes, and solar cells. In this paper …