Nonvolatile reconfigurable transistors can be used to implement highly flexible and compact
logic circuits with low power consumption in maintaining the configuration. In this paper, we …

Abstract Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene,
and transition metal dichalcogenides have attracted intense research attention because of …

We report a charge-based analytic and explicit compact model for field-effect transistors
(FETs) based on 2-D materials (2DMs), for the simulation of 2DM-based analog and digital …

Two-dimensional material-based field-effect transistors (2DM-FETs) exhibit both ambipolar
and unipolar carrier transports. To physically and compactly cover both cases, a quasi-Fermi …

In this work, we describe the charge transport in 2-D Schottky barrier field-effect transistors
(SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a …

As the scaling of integrated circuits based on silicon semiconductors becomes increasingly
challenging due to the minimum feature size being close to the physical limit, the urgent …

In this article, we report the development of a novel physics-based analytical model for
explaining the current-voltage relationship in Schottky barrier (SB) 2-D-material field effect …

In this work, the authors study the performance of black phosphorus double gate MOSFET
(BP‐DGMOSFET) within the ballistic limit. A hybrid simulation technique involving both …

In the first part of this article, a physics-based surface-potential compact model to describe
current-voltage (IV) relationship in few-layered ambipolar black phosphorus (BP) transistors …

Ambipolar field-effect transistors (FETs) based on two-dimensional (2D) channel materials
have enabled various applications such as in-memory computing, nonlinear logic, and …