Characterization of hydrogen-like states in bulk Si1− xGex alloys through muonium observations
PJC King, RL Lichti, SP Cottrell… - Journal of Physics …, 2005 - iopscience.iop.org
Much of our knowledge of the charge states, lattice site and behaviour of hydrogen in bulk
semiconductors comes from observation of its muonium analogue. Here we present studies …
semiconductors comes from observation of its muonium analogue. Here we present studies …
Influence of Ge content on formation of radiation defects in Si1− xGex solid solutions
The process of radiation defect formation in bulk Si1− xGex alloy was investigated taking
into account the dependence of introduction rates of primary radiation defects on the content …
into account the dependence of introduction rates of primary radiation defects on the content …
ЭЛЕКТРОФИЗИЧЕСКИЕ СВОЙСТВА p i n-СТРУКТУР И БАРЬЕРОВ ШОТТКИ НА ОСНОВЕ p-Si1-xGex Au
ИГ Атабаев, НА Матчанов, ЭН Бахранов… - Неорганические …, 2008 - elibrary.ru
Исследованы свойства pin-структур и барьеров Шоттки на основе твердых растворов
Si 1 x Ge x, i-область которой создана путем компенсации золотом. Установлено, что …
Si 1 x Ge x, i-область которой создана путем компенсации золотом. Установлено, что …
Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers
IG Atabaev, NA Matchanov, EN Bakhranov… - Inorganic Materials, 2008 - Springer
We have studied the properties of Si 1− x Ge x-based pin structures and Schottky barriers in
which the i-region had been produced via compensation with gold. The results demonstrate …
which the i-region had been produced via compensation with gold. The results demonstrate …
ОДНОРОДНОСТЬ ВЫСОКООМНЫХ КРИСТАЛЛОВ p-p-Si1xGex Au
ИГ Атабаев, НА Матчанов, ЭН Бахранов… - Неорганические …, 2008 - elibrary.ru
Проведено легирование р-Si 1 x Ge x золотом. Исследованы технологические режимы
диффузии атомов золота в образцах р-Si 1 x Ge x Au и их электрофизические …
диффузии атомов золота в образцах р-Si 1 x Ge x Au и их электрофизические …
Homogeneity of high-resistivity p-Si1 − x Ge x crystals
IG Atabaev, NA Matchanov, EN Bakhranov… - Inorganic Materials, 2008 - Springer
Abstract p-Si 1− x Ge x crystals have been diffusion-doped with gold. Gold diffusion in the p-
Si 1− x Ge x samples and their electrical properties have been studied. The results …
Si 1− x Ge x samples and their electrical properties have been studied. The results …
Characterization of radiation-related damage in bulk-grown silicon–germanium detectors
I Yaroslavski, A Ruzin - Nuclear Instruments and Methods in Physics …, 2006 - Elsevier
Electrical properties of irradiated p-type, PIN, Si1− xGex (x= 0.028) devices were compared
to the similar non-irradiated devices, which were fabricated on the same wafer. Differences …
to the similar non-irradiated devices, which were fabricated on the same wafer. Differences …