Polarization-induced carriers play an important role in achieving high electrical conductivity
in ultrawide bandgap semiconductor AlGaN, which is essential for various applications …

N-polar AlN epilayers were grown on the N-face of single-crystal bulk AlN substrates by
plasma-assisted molecular beam epitaxy. A combination of in situ thermal deoxidation and …

In this work, we report the growth, fabrication, and characterization of aluminum gallium
nitride (AlGaN) nanowire deep ultraviolet light-emitting diodes with a polarization …

Using low-temperature cathodoluminescence spectroscopy, we study the properties of N-
and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN {0001}. Compared …

III-Nitride micropillar structures show great promise for applications in micro light-emitting
diodes and vertical power transistors due to their excellent scalability and outstanding …

As part of this study, we present a study on the act of electrically driven Laser Diode (LD)
using trinary Aluminum Gallium Nitride (AlGaN) with optimized doping concentrations. To …

Herein, the lasing threshold and gain characteristics of ultraviolet‐C optically pumped edge‐
emitting lasers with thick single‐quantum‐well (SQW) active regions are investigated by the …

Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type
layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN …

Aluminum gallium nitride (AlGaN) ultraviolet (UV) laser diodes (LDs) are of great research
interest due to their wide range of applications and promising future to replace today's …

Aluminum Nitride with a direct ultra-wide bandgap (UWBG) of 6.1 eV and a very high Debye
temperature has traditionally been considered as a piezoelectric insulator. AlN, as an …