Leakage mechanism in ferroelectric Hf0. 5Zr0. 5O2 epitaxial thin films
X Cheng, C Zhou, B Lin, Z Yang, S Chen… - Applied Materials …, 2023 - Elsevier
Abstract Fluorite-structured Hf 0.5 Zr 0.5 O 2 (HZO) thin films have attracted considerable
attention in recent years because of their good CMOS-compatibility and robust …
attention in recent years because of their good CMOS-compatibility and robust …
Graphene Oxide-Doped Indium Oxide Buffer Film Sandwiched between Titanium Oxide Layers for the Development of Photosensitive Resistive Memory Devices
JY Lee, G Tarsoly, SJ Kim - ACS Applied Materials & Interfaces, 2024 - ACS Publications
Over the past decade, metal oxide semiconductors have attracted considerable attention
because of their transparency, high intrinsic charge carrier mobility, and charge carrier …
because of their transparency, high intrinsic charge carrier mobility, and charge carrier …
Write-Once-Read-Many-Times Nonvolatile Memory Characteristics of Sol–Gel Hafnium Zirconium Oxide
WC Jhang, TC Hsieh, XZ Zhang, ZR Qiu… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this article, write-once-read-many-times (WORM) memory behavior of HfZrO (HZO)
ferroelectric material is demonstrated. A stoichiometric Hf0. 5Zr0. 5O2 thin film prepared …
ferroelectric material is demonstrated. A stoichiometric Hf0. 5Zr0. 5O2 thin film prepared …
Electrical Characterization of Ferroelectric Tunnel Junctions based on Hafnium Oxide for Neuromorphic Applications
J Barbot - 2023 - theses.hal.science
Ferroelectric memories have regained significant interest since the 2010s, following the
discovery of ferroelectricity in hafnium oxide. This breakthrough holds the promise of …
discovery of ferroelectricity in hafnium oxide. This breakthrough holds the promise of …
Impact of Oxygen on the Conduction Mechanism Through Hf0. 5zr0. 5o2 For Reram Memory Applications
YLG Hernandez - 2022 - search.proquest.com
Ferroelectric tunnel junctions (FTJs) are emerging non-volatile resistive memory holding the
promise of combining the versatility of resistive random-access memory (ReRAM) in …
promise of combining the versatility of resistive random-access memory (ReRAM) in …
Impact of oxygen on the conduction mechanism through hf0. 5zr0. 5o2 for ReRAM memory applications.
YL Gonzalez Hernandez - 2022 - espace.inrs.ca
Ferroelectric tunnel junctions (FTJs) are emerging non-volatile resistive memory holding the
promise of combining the versatility of resistive random-access memory (ReRAM) in …
promise of combining the versatility of resistive random-access memory (ReRAM) in …