The past decades have witnessed a tremendous development of GaN-based power
electronic devices grown on Si substrate. This article provides a concise introduction …

The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …

Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …

In this paper, we give an overview of the recent progress in GaN-based high-electron-
mobility transistors (HEMTs) developed for mainstream acceptance in the power electronics …

This paper describes recent technological advances on III-nitride-based transistors for
power switching applications. Focuses are placed on the progress toward enhancing the …

Nitrogen polar (N-Polar) GaN high-electron-mobility transistors (HEMT) targeting high-
voltage switching applications were fabricated on epi-layers grown by metal-organic …

Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …