[HTML][HTML] Heteroepitaxial growth of III-V semiconductors on silicon
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
[HTML][HTML] Recent progress of quantum dot lasers monolithically integrated on Si platform
With continuously growing global data traffic, silicon (Si)-based photonic integrated circuits
have emerged as a promising solution for high-performance Intra-/Inter-chip optical …
have emerged as a promising solution for high-performance Intra-/Inter-chip optical …
1.3 µm quantum dot‐distributed feedback lasers directly grown on (001) Si
Distributed feedback (DFB) lasers represent a central focus for wavelength‐division‐
multiplexing‐based transceivers in metropolitan networks. Here, the first 1.3 µm quantum dot …
multiplexing‐based transceivers in metropolitan networks. Here, the first 1.3 µm quantum dot …
Low dark current high gain InAs quantum dot avalanche photodiodes monolithically grown on Si
Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band
are crucial for the Si-based transceiver application. In this paper, we report the first O-band …
are crucial for the Si-based transceiver application. In this paper, we report the first O-band …
Directly modulated single‐mode tunable quantum dot lasers at 1.3 µm
Wavelength tunable lasers are increasingly needed as key components for wavelength
resource management technologies in future dense wavelength division multiplexing …
resource management technologies in future dense wavelength division multiplexing …
[HTML][HTML] Monolithic integration of O-band InAs quantum dot lasers with engineered GaAs virtual substrate based on silicon
B Xu, G Wang, Y Du, Y Miao, B Li, X Zhao, H Lin, J Yu… - Nanomaterials, 2022 - mdpi.com
The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long
attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs …
attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs …
1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon
Realization of fully integrated silicon photonics has been handicapped by the lack of a
reliable and efficient III-V light source on Si. Specifically, electrically pumped continuous …
reliable and efficient III-V light source on Si. Specifically, electrically pumped continuous …
InAs/GaAs quantum-dot lasers grown on on-axis Si (001) without dislocation filter layers
Y Wang, B Ma, J Li, Z Liu, C Jiang, C Li, H Liu… - Optics …, 2023 - opg.optica.org
InAs/GaAs quantum dot (QD) laser monolithically grown on silicon is one of the potential
approaches to realizing silicon-based light sources. However, the mismatch between GaAs …
approaches to realizing silicon-based light sources. However, the mismatch between GaAs …
High-performance O-band quantum-dot semiconductor optical amplifiers directly grown on a CMOS compatible silicon substrate
High gain and high saturation output power silicon-based semiconductor optical amplifiers
(SOAs) are essential elements in future large-scale silicon photonic integrated circuits (PICs) …
(SOAs) are essential elements in future large-scale silicon photonic integrated circuits (PICs) …
Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si
We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers
directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No …
directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No …