Threshold voltage modeling of Gaussian-doped Dual work function Material Cylindrical Gate-all-around (CGAA) MOSFET considering the effect of temperature and …
P Banerjee, J Das - Microelectronics Journal, 2022 - Elsevier
Current research endeavor encompasses comprehensive threshold voltage analysis of a
Gaussian-doped Dual work function Material (DM) Cylindrical Gate-all-around (CGAA) …
Gaussian-doped Dual work function Material (DM) Cylindrical Gate-all-around (CGAA) …
Pragmatic Evaluation of Process Corners in ULP Subthreshold Circuits With Quantum Confinement Effects in Junctionless Nanowire Transistor
This paper proposes a simplified analytical approach to analyze the influence of process
variations including quantum confinement effect (QCE) on the functionality of ultralow power …
variations including quantum confinement effect (QCE) on the functionality of ultralow power …
A physics-based model for LER-induced threshold voltage variations in double-gate MOSFET
The line-edge roughness (LER) has become one of the dominant sources of process
variations in multi-gate transistors. The estimation of threshold voltage distribution due to …
variations in multi-gate transistors. The estimation of threshold voltage distribution due to …