Method and system for providing a magnetoresistive structure
US8545999B1 - Method and system for providing a magnetoresistive structure - Google Patents
US8545999B1 - Method and system for providing a magnetoresistive structure - Google …
US8545999B1 - Method and system for providing a magnetoresistive structure - Google …
Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface
(57) ABSTRACT A spin tunneling element includes a pinned layer, a barrier layer, and a free
layer. The free layer includes a ferromagnetic layer including a ferromagnetic material that …
layer. The free layer includes a ferromagnetic layer including a ferromagnetic material that …
Magnetoresistive sensors having an improved free layer
A magnetoresistive sensor having a novel free layer and a method of producing the same
are disclosed. The magnetoresistive sensor comprises a pinned layer, a barrier layer …
are disclosed. The magnetoresistive sensor comprises a pinned layer, a barrier layer …
Method and system for providing a read sensor having a low magnetostriction free layer
A method and system for providing a magnetic structure in magnetic transducer is described.
The magnetic structure includes a pinned layer, a nonmagnetic spacer layer, and a free …
The magnetic structure includes a pinned layer, a nonmagnetic spacer layer, and a free …
Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application
CT Horng, RY Tong, G Liu, R Beach, W Kula… - US Patent …, 2013 - Google Patents
(57) ABSTRACT A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural
oxidation and containing an oxygen Sur factant layer to form a more uniform MgO layer and …
oxidation and containing an oxygen Sur factant layer to form a more uniform MgO layer and …
Method and system for providing a spin tunneling magnetic element having a crystalline barrier layer
Y Shen, Q Leng - US Patent 8,547,730, 2013 - Google Patents
The method and system for providing a spin tunneling element are disclosed. The method
and system include depositing a pinned layer, a barrier layer, and a free layer. The barrier …
and system include depositing a pinned layer, a barrier layer, and a free layer. The barrier …
Magnetoresistive effect element and manufacturing method thereof
H Fukuzawa, H Yuasa, Y Fuji, H Iwasaki - US Patent 8,048,492, 2011 - Google Patents
(57) ABSTRACT A magnetoresistive effect element is produced by forming a first magnetic
layer, a spacer layer including an insulating layer and a conductive layer which penetrates …
layer, a spacer layer including an insulating layer and a conductive layer which penetrates …
Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness and related methods
S Oh, KJ Lee, J Lee, HJ Suh - US Patent 8,345,474, 2013 - Google Patents
A magnetic memory device may include a tunnel barrier, a reference layer on a first side of
the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel …
the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel …
Scanning magnetic microscope having improved magnetic sensor
G Xiao - US Patent 7,145,330, 2006 - Google Patents
(57) ABSTRACT A scanning magnetic microscope SMM (20) includes a sensor (10) for
sensing a magnetic field generated by a specimen (78), the sensor including one of a MTJ, a …
sensing a magnetic field generated by a specimen (78), the sensor including one of a MTJ, a …
Magnetic tunnel junction device
J Sun, JM Slaughter - US Patent 8,216,703, 2012 - Google Patents
(57) ABSTRACT A magnetic tunnel junction (MTJ)(10) employing a dielec tric tunneling
barrier (16), useful in magnetoresistive random access memories (MRAMs) and other …
barrier (16), useful in magnetoresistive random access memories (MRAMs) and other …