6G roadmap for semiconductor technologies: Challenges and advances
N Cahoon, P Srinivasan… - 2022 IEEE International …, 2022 - ieeexplore.ieee.org
The sub-THz spectrum between 100GHz and 300GHz is of great interest for achieving next
generation 6G cellular network goals of ultra-high data rate, ultra-low latency and high …
generation 6G cellular network goals of ultra-high data rate, ultra-low latency and high …
On the performance of GaN‐on‐silicon, silicon‐carbide, and diamond substrates
A Jarndal, L Arivazhagan… - International Journal of RF …, 2020 - Wiley Online Library
In this article, threading dislocations and its impact on the electrical and thermal
performance of GaN‐on‐Diamond (Dia),‐SiC, and‐Si high electron mobility transistor …
performance of GaN‐on‐Diamond (Dia),‐SiC, and‐Si high electron mobility transistor …
Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0. 22Ga0. 78N/GaN heterostructures
In this report, the gate leakage mechanism for AlGaN/GaN high electron mobility transistors
(HEMTs) is consistently analyzed by means of temperature-dependent reverse gate current …
(HEMTs) is consistently analyzed by means of temperature-dependent reverse gate current …
Guidelines for space qualification of GaN HEMTs and MMICs
J Scarpulla - 2021 IEEE International Reliability Physics …, 2021 - ieeexplore.ieee.org
GaN HEMTs and MMICs are candidates for use in space system because of their many
advantages especially as Rf/microwave amplifiers. To date however, although efforts are …
advantages especially as Rf/microwave amplifiers. To date however, although efforts are …
Low temperature defect passivation technology for semiconductor electronic devices—Supercritical fluids treatment process
Currently, defects existing in materials and at the interface are the main bottlenecks limiting
the manufacture of high-performance electron devices, especially semiconductor devices …
the manufacture of high-performance electron devices, especially semiconductor devices …
Investigation of the Reverse Leakage Behavior and Substrate Defects in Vertical GaN Schottky and PIN Diodes
In this work, the effects of the substrate defect density and distribution on the reverse
leakage behavior of GaN vertical Schottky diodes and p–i–n diodes are investigated. A …
leakage behavior of GaN vertical Schottky diodes and p–i–n diodes are investigated. A …
The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs
In this paper, an integrated device which realized the dual-mode integration of power
amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is …
amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is …
Nanometer-Thick Insertion Layer for the Effective Passivation of Surface Traps and Improved Edge Acuity for AlGaN/GaN HEMTs
In AlGaN/GaN high electron mobility transistors (HEMTs), the existence of long lifetime
surface traps can cause several adverse effects, including threshold voltage () instability and …
surface traps can cause several adverse effects, including threshold voltage () instability and …
Hole trap, leakage current and barrier inhomogeneity in (Pt/Au) Al0. 2Ga0. 8N/GaN heterostructures
In this work, we report on the electrical characteristics of Pt/Au Schottky contacts to Al 0.2 Ga
0.8 N/GaN heterostructures. Indeed, we have realized gate current-voltage I (V) and deep …
0.8 N/GaN heterostructures. Indeed, we have realized gate current-voltage I (V) and deep …
Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors
B Zhou, C Liu, C Guo, X Hu, X Jian, H Wang, X Yang - Micromachines, 2024 - mdpi.com
In this paper, high-temperature storage of hydrogen-treated AlGaN/GaN HEMTs is
conducted for the first time to study the effect of high temperature on the electrical …
conducted for the first time to study the effect of high temperature on the electrical …