AlN buffer enhances the layer quality of MBE-grown cubic GaN on 3C-SiC
MF Zscherp, N Mengel, DM Hofmann… - Crystal Growth & …, 2022 - ACS Publications
Cubic nitrides are candidate materials for next-generation optoelectronic applications as
they possess no internal fields and promise to cover large parts of the electromagnetic …
they possess no internal fields and promise to cover large parts of the electromagnetic …
Strong effect of electron-phonon interaction on the lattice thermal conductivity in 3C-SiC
3C-SiC is a promising semiconductor for many applications where doping and heat
dissipation are fundamental parameters in the device design. However, the variation of …
dissipation are fundamental parameters in the device design. However, the variation of …
Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation
The cubic form of SiC (β-or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H-
and 6H–SiC, has lower growth cost and can be grown heteroepitaxially in large area silicon …
and 6H–SiC, has lower growth cost and can be grown heteroepitaxially in large area silicon …
Mechanical properties of continuous fiber composites of cubic silicon carbide (3C-SiC)/different types of carbon nanotubes (SWCNTs, RSWCNTs, and MWCNTs): a …
The composites made from cubic silicon carbide (3C-SiC), as a matrix, and carbon
nanotubes (CNTs), as reinforcements, have a wide range of applications in the industry …
nanotubes (CNTs), as reinforcements, have a wide range of applications in the industry …
Exploring electrical conductivity, antibacterial efficacy, and photocatalytic activity in nanosilver-decorated β-SiC/graphene nanocomposites
MN Rasheed, S Naz, MS Zafar, J Saeed… - Materials Chemistry and …, 2024 - Elsevier
A series of silver-doped β-SiC/graphene nanoparticles (NPs) were systematically
synthesized via solid-state reactions, aiming to optimize electrical conductivity, heightening …
synthesized via solid-state reactions, aiming to optimize electrical conductivity, heightening …
Nanoscale elastic‐plastic deformation and mechanical properties of 3C‐SiC thin film using nanoindentation
The elastic‐plastic deformation of 3C‐SiC thin film was investigated by a nanoindenter
equipped with the Berkovich tip. Transition from pure elastic to elastic‐plastic deformation …
equipped with the Berkovich tip. Transition from pure elastic to elastic‐plastic deformation …
Laser assisted doping of silicon carbide thin films grown by pulsed laser deposition
E Paneerselvam, VK Lakshmi Narayanan… - Journal of Electronic …, 2019 - Springer
Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on
magnesium oxide [MgO (100)] substrates at a substrate temperature of 800° C. Besides, p …
magnesium oxide [MgO (100)] substrates at a substrate temperature of 800° C. Besides, p …
A first evaluation of thick oxide 3C-SiC MOS capacitors reliability
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on
the reliability of SiO 2 layers on 3C-SiC, which is crucial in power MOS device …
the reliability of SiO 2 layers on 3C-SiC, which is crucial in power MOS device …
Investigation of PCVSi− defect in 4H–SiC as a candidate for a qubit
L Sun, W Zhang, B Peng, W Zhang - Journal of Physics D …, 2024 - iopscience.iop.org
Exploration of spin defects in semiconductors for possible qubits encourages the
development of the quantum field. Silicon carbide (SiC) is a suitable platform to carry spin …
development of the quantum field. Silicon carbide (SiC) is a suitable platform to carry spin …
Contribution to the study of the SiC MOSFETs gate oxide
OA Salvadó - 2018 - theses.hal.science
SiC power MOSFETs are called to replace Si IGBT for some medium and high power
applications (hundreds of kVA). However, even if crystallographic defects have been …
applications (hundreds of kVA). However, even if crystallographic defects have been …