Apparatus and processes for preparing heterostructures with reduced strain are disclosed.
The heterostructures may include a semiconductor structure that conforms to a surface layer …

The present invention provides a method of forming a strained semiconductor layer. The
method comprises growing a strained first semiconductor layer, having a graded dopant …

(57) ABSTRACT A method for reducing light point defects of a semiconductor on-insulator
structure and a method for reducing the Surface roughness of a semiconductor-on-insulator …

(57) ABSTRACT A photovoltaic cell device, eg, Solar cell, Solar panel, and method of
manufacture. The device has an optically transpar ent substrate comprises a first surface …

(57) ABSTRACT A thickness of material may be detached from a substrate along a cleave
plane, utilizing a cleaving process controlled by a releasable constraint plate. In some …

(57) ABSTRACT Related US Application Data A film of material may be formed by providing
a semicon (60) Provisional application No. 61/051,307, filed on May ductor Substrate having …

(57) ABSTRACT A film of material may be formed by providing a semicon ductor Substrate
having a Surface region and a cleave region located at a predetermined depth beneath the …

A method for forming a strained layer of semiconductor material, eg, silicon, germanium,
Group III/V, silicon germanium alloy. The method includes providing a non-deformable …

0001) 1 Field of the Invention 0002 The invention relates to a semiconductor wafer with a
diameter of at least 200 mm produced by a layer transfer process including at least one RTA …

Embodiments of the present invention relate to the use of a particle accelerator beam to form
thin films of material from a bulk substrate. In particular embodiments, a bulk substrate …