We have seen the significant influence of the information revolution brought about by
optoelectronic sensing technologies on human civilization over the last few decades …

Photodetectors integrating substrates and semiconductor materials are increasingly
attractive for applications in optical communication, optical sensing, optical computing, and …

Achieving high threshold current density and high optical confinement are big challenges in
the realization of high-performance aluminum gallium nitride (AlGaN)-based deep-ultraviolet …

Abstract Commonly, the Al-rich AlGaN layer acts as electron blocking layer (EBL) to block
the overflow of electrons from the active region in conventional AlGaN deep-ultraviolet …

AlGaN deep ultraviolet (DUV) with the high induced polarization emitters effect degrades the
performance of the laser diode (LD) and brings a higher injection current density, resulting in …

Aluminium (Al) composition is a critical parameter of performance for deep ultraviolet (DUV)
AlGaN devices. In multiple-quantum-wells (MQW) nanowire laser diode, quantum barriers …

Toxic and low-pressure deep-ultraviolet (DUV) mercury lamps have been used widely for
applications of surface disinfection and water sterilization. The exposure of pathogens to …

In the past, low-pressure mercury (Hg)-based deep-ultraviolet (DUV) lamps have been
widely used for real-world applications. The exposure of pathogen to DUV radiation at 254 …

GaN-based single-photon sources have received immense attention for applications in
quantum technologies. An isolated semiconductor quantum dot (QD) is an attractive and …

Abstract The Minamata Convention of 2020 mandates the replacement of conventional
mercury UV lamps with deep ultraviolet (DUV) light-emitting diodes (LEDs) emitting at 254 …