This article critically reviews the fabrication challenges, emerging materials (wafer, high-k
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …

In this paper, a novel structure of gate-all-around vertical TFET (GAA-VTFET) is proposed
and investigated for the first time with the help of 3D TCAD simulator. It is found that GAA …

For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …

This manuscript for the first time presents the digital and analog/RF performance analysis for
novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) …

This manuscript for the first time investigates the effect of Dual Metal on Gate Junctionless
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …

In this article, a reliable drain-extended (De) fin-shaped field-effect transistor (DeFinFET)
with improved thermal performance and electrical performance is proposed for high-voltage …

As conventional Complementary Metal Oxide Semiconductor (CMOS) reaches extreme
limitation to implement the digital circuits with high density and low power dissipation …

For improving self-heating effect (SHE) in Ge vertically stacked gate-all-around (GAA)
nanowire (NW) p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) …

This chapter addresses overall CMOS design techniques for the future technology nodes
(especially, sub 7-nm node technology). In the introduction, the emerging new materials and …

This comprehensive study delves into the intricate analysis of the electrical and analog/RF
performance of the Dual Material (DM) junctionless (JL) Tree-FET. During the optimization …