Robust approach towards wearable power efficient transistors with low subthreshold swing

E Elahi, M Suleman, S Nisar, PR Sharma… - Materials Today …, 2023 - Elsevier
For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …

Dynamic resistive switching devices for neuromorphic computing

Y Wu, X Wang, WD Lu - Semiconductor Science and Technology, 2021 - iopscience.iop.org
Neuromorphic systems that can emulate the structure and the operations of biological neural
circuits have long been viewed as a promising hardware solution to meet the ever-growing …

Improved memory performance of ALD grown HfO2 films by nitrogen doping

J Aziz, MF Khan, D Neumaier, M Ahmad, H Kim… - Materials Science and …, 2023 - Elsevier
Resistive switching devices have shown potential in storage class memory and artificial
intelligence applications but however, it faces drastic limitations due to low endurance, bad …

Stable and multilevel data storage resistive switching of organic bulk heterojunction

H Patil, H Kim, S Rehman, KD Kadam, J Aziz, MF Khan… - Nanomaterials, 2021 - mdpi.com
Organic nonvolatile memory devices have a vital role for the next generation of electrical
memory units, due to their large scalability and low-cost fabrication techniques. Here, we …

Discrete memristive levels and logic gate applications of Nb2O5 devices

J Aziz, H Kim, S Rehman, KD Kadam, H Patil… - Journal of Alloys and …, 2021 - Elsevier
Controlled resistive switching behavior has shown potential for brain-inspired functionalities
and feasibility for multi-functional photelectric sensors. For the first time, bias-polarity …

Power efficient transistors with low subthreshold swing using abrupt switching devices

J Aziz, H Kim, T Hussain, H Lee, T Choi, S Rehman… - Nano Energy, 2022 - Elsevier
With the rapid development of transparent integrated circuits, transistors with extremely low
subthreshold swing (SS) is becoming a necessary requirement. Here, we fabricated three …

Tunable digital-to-analog switching in Nb2O5-based resistance switching devices by oxygen vacancy engineering

J Xu, H Wang, Y Zhu, Y Liu, Z Zou, G Li, R Xiong - Applied Surface Science, 2022 - Elsevier
Memristors have received tremendous attention recently for neuromorphic computing and
high-density data storage due to their potential for miniaturization; however, the …

Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristors

SK Nandi, SK Nath, SK Das, BJ Murdoch… - … Applied Materials & …, 2023 - ACS Publications
The resistive switching response of two terminal metal/oxide/metal devices depends on the
stoichiometry of the oxide film, and this is commonly controlled by using a reactive metal …

Au decorated ZnO nanostructures for enhanced visible emission and memory applications

J Aziz, N Nasir, E Elahi, A Ali, S Mehmood… - Journal of Alloys and …, 2023 - Elsevier
Metal/semiconductor nanocomposites present the most versatile way to tune the optical and
electrical properties of semiconductors at the nanometer scale. In the present study, Au/ZnO …

Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x= 2.0–2.5) films

J Aziz, H Kim, S Rehman, JH Hur, YH Song… - Materials Research …, 2021 - Elsevier
In this study, we report the Poole-Frenkel induced threshold switching characteristics of
niobium dioxide (NbO 2) films by tuning oxygen stoichiometry. Similar to correlated oxides …