Epitaxial ferroelectric interfacial devices

CAF Vaz, YJ Shin, M Bibes, KM Rabe… - Applied Physics …, 2021 - pubs.aip.org
Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

Two-dimensional van der Waals ferroelectric field-effect transistors toward nonvolatile memory and neuromorphic computing

X Lin, X Huang, Q Zhang, J Yi, S Liu, Q Liang - Applied Physics Letters, 2023 - pubs.aip.org
With the gradual decline in Moore's law, traditional silicon-based technologies have
encountered numerous challenges and limitations, prompting researchers to seek solutions …

Polarization induced self-doping in epitaxial Pb(Zr0.20Ti0.80)O3 thin films

L Pintilie, C Ghica, CM Teodorescu, I Pintilie… - Scientific Reports, 2015 - nature.com
The compensation of the depolarization field in ferroelectric layers requires the presence of
a suitable amount of charges able to follow any variation of the ferroelectric polarization …

[PDF][PDF] Direct evidence for cation non-stoichiometry and Cottrell atmospheres around dislocation cores in functional oxide interfaces

M Arredondo, QM Ramasse… - Advanced …, 2010 - www-old.mpi-halle.mpg.de
Perovskite oxides are a ubiquitous class of functional oxide materials that are used in a
variety of nanoscale functional applications.[1] In order to exploit their properties, these …

The influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin films

M Andrä, F Gunkel, C Bäumer, C Xu, R Dittmann… - Nanoscale, 2015 - pubs.rsc.org
In this study, the influence of the local oxygen vacancy concentration on piezoresponse
force microscopy (PFM) measurements was investigated. Ultra-thin single-crystalline SrTiO3 …

Are ferroelectric multilayers capacitors in series?

FC Sun, MT Kesim, Y Espinal, SP Alpay - Journal of materials science, 2016 - Springer
We show that ferroelectric multilayers are not simple capacitors in series (CIS) and treating
these as CIS may lead to misinterpretation of experimental results and to erroneous …

Atomic-scale mapping of interface reconstructions in multiferroic heterostructures

W Huang, Y Yin, X Li - Applied Physics Reviews, 2018 - pubs.aip.org
Multiferroic materials 1, 2 are a special class of functional compounds in which at least two
ferroic orderings, such as ferroelectric,(anti-) ferromagnetic, ferroelastic, and ferrotoroidic …

Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions

W Huang, Y Lin, Y Yin, L Feng, D Zhang… - … Applied Materials & …, 2016 - ACS Publications
A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched
between two ferromagnetic layers, presents at least four resistance states in a single …

Cationic redistribution at epitaxial interfaces in superconducting two-dimensionally doped lanthanum cuprate films

F Baiutti, G Gregori, Y Wang, YE Suyolcu… - … Applied Materials & …, 2016 - ACS Publications
The exploration of interface effects in complex oxide heterostructures has led to the
discovery of novel intriguing phenomena in recent years and has opened the path toward …

Chemistry of Ruddlesden–Popper planar faults at a ferroelectric–ferromagnet perovskite interface

M Arredondo, M Weyland, M Hambe… - Journal of Applied …, 2011 - pubs.aip.org
We investigate the interfacial structure of PbZr 0.20 Ti 0.80 O 3 (PZT)/La 0.67 Sr 0.33 MnO 3
(LSMO)/SrTiO 3 heterostructures by combining low-magnification transmission electron …