The Berkeley short-channel IGFET model (BSIM), an accurate and computationally efficient
MOS transistor model, and its associated characterization facility for advanced integrated …

A reprint of the classic text, this book popularized compact modeling of electronic and
semiconductor devices and components for college and graduate-school classrooms, and …

The realization of a commercially viable, general-purpose quad CMOS amplifier is
presented, along with discussions of the tradeoffs involved in such a design. The amplifier …

Micropower integrated circuits techniques and technologies were originally developed for
applications in electronic watches [1, 2]. Modern watch circuits have a complexity ranging …

We develop a method to estimate the variation of leakage current due to both intra-die and
inter-die gate length process variability. We derive an analytical expression to estimate the …

The authors present a parametric model which covers the subthreshold and strong inversion
regions with a continuous transition between these regions. The effects included in the …

Presents a new approach for the estimation and optimization of standby power dissipation in
large MOS digital circuits. We introduce a new approach for accurate and efficient …

In recent publications the drain-induced barrier-lowering (DIBL) effect has been included in
the determination of the drain current of short-channel MOSFET's by way of analytical …

Low power supply operation with leakage power reduction is the prime concern in modern
nano-scale CMOS memory devices. In the present scenario, low leakage memory …

A new alternative technique is proposed to extract the threshold voltage from the
subthreshold-to-strong inversion transition region of MOSFETs. It uses an auxiliary operator …