The future of ferroelectric field-effect transistor technology
The discovery of ferroelectricity in oxides that are compatible with modern semiconductor
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …
Emergent ferroelectricity in subnanometer binary oxide films on silicon
The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
Compact artificial neuron based on anti-ferroelectric transistor
Neuromorphic machines are intriguing for building energy-efficient intelligent systems,
where spiking neurons are pivotal components. Recently, memristive neurons with …
where spiking neurons are pivotal components. Recently, memristive neurons with …
Electrical investigation of wake-up in high endurance fatigue-free La and Y doped HZO metal–ferroelectric–metal capacitors
AM Walke, MI Popovici, K Banerjee… - … on Electron Devices, 2022 - ieeexplore.ieee.org
High endurance of 10 11 cycles is demonstrated in~ 9–10-nm stoichiometric Hafnium
Zirconate (HZO) metal–ferroelectric–metal (MFM) capacitors deposited using Cl precursors …
Zirconate (HZO) metal–ferroelectric–metal (MFM) capacitors deposited using Cl precursors …
Antiferroelectric negative capacitance from a structural phase transition in zirconia
Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric
polarization, which originates from a microscopic electric dipole moment. Long-range polar …
polarization, which originates from a microscopic electric dipole moment. Long-range polar …
Intrinsic 90 charged domain wall and its effects on ferroelectric properties
P Zhou, B Zeng, W Yang, J Liao, F Meng, Q Zhang… - Acta Materialia, 2022 - Elsevier
The domain is an important characteristic of ferroelectric materials, and the type of domain
can have significant effects on the performance of ferroelectric materials. In particular, the …
can have significant effects on the performance of ferroelectric materials. In particular, the …
Emerging fluorite-structured antiferroelectrics and their semiconductor applications
The ferroelectric properties of fluorite-structured oxides have attracted significant attention
from researchers because of their potential applications in nonvolatile memory devices …
from researchers because of their potential applications in nonvolatile memory devices …
Local epitaxial-like templating effects and grain size distribution in atomic layer deposited Hf0. 5Zr0. 5O2 thin film ferroelectric capacitors
The microstructure in fluorite-structure oxide-based ferroelectric thin films, especially when
on standard semiconductor manufacturing platforms, is poly-/nano-crystalline, which …
on standard semiconductor manufacturing platforms, is poly-/nano-crystalline, which …
Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films
In this letter, we systematically studied the relationship between ferroelectricity/anti-
ferroelectricity and the corresponding phase structures in Hf1-xZrxO2 (HZO) films. Our …
ferroelectricity and the corresponding phase structures in Hf1-xZrxO2 (HZO) films. Our …
Giant energy storage and power density negative capacitance superlattices
Dielectric electrostatic capacitors1, due to their ultrafast charge-discharge capability, are
attractive for high power energy storage applications. Along with ultrafast operation, on-chip …
attractive for high power energy storage applications. Along with ultrafast operation, on-chip …