Photoelectrochemical water splitting using one-dimensional nanostructures

JW Lee, KH Cho, JS Yoon, YM Kim… - Journal of Materials …, 2021 - pubs.rsc.org
Hydrogen energy is an attractive alternative to fossil fuels. Among the various methods for
H2 production, solar-driven photoelectrochemical (PEC) water splitting is considered as the …

Two-step photon up-conversion solar cells

S Asahi, H Teranishi, K Kusaki, T Kaizu… - Nature Communications, 2017 - nature.com
Reducing the transmission loss for below-gap photons is a straightforward way to break the
limit of the energy-conversion efficiency of solar cells (SCs). The up-conversion of below …

Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering

UD Menda, G Ribeiro, J Deuermeier, E López… - ACS …, 2023 - ACS Publications
By harvesting a wider range of the solar spectrum, intermediate band solar cells (IBSCs) can
achieve efficiencies 50% higher than those of conventional single-junction solar cells. For …

Tailoring the optical properties of InAs/GaAs quantum dots by means of GaAsSb, InGaAs and InGaAsSb strain reducing layers

A Salhi, S Alshaibani, B Ilahi, M Alhamdan… - Journal of Alloys and …, 2017 - Elsevier
Abstract Self-organized InAs QDs have been grown by Molecular Beam Epitaxy with
different strain reducing layers (SRL) having nearly similar lattice mismatches to GaAs. The …

Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy

M Al Huwayz, HVA Galeti, OM Lemine… - Journal of …, 2022 - Elsevier
Extensive work on InAs quantum dots grown on GaAs substrates has been reported in the
literature. However, research in the use of different substrate materials such as silicon to …

Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

S Golovynskyi, O Datsenko, L Seravalli… - Semiconductor …, 2017 - iopscience.iop.org
Deep levels in metamorphic InAs/In x Ga 1− x As quantum dot (QD) structures are studied
with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and …

Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam …

M Al Huwayz, DA Jameel, WM de Azevedo… - Physical Chemistry …, 2024 - pubs.rsc.org
This study investigates the impact of gamma radiation on the electrical properties of
InAs/InGaAs quantum dot-based laser structures grown on both GaAs (Sample A) and Si …

Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructure

B Tongbram, A Mandal, S Sengupta… - Journal of Alloys and …, 2017 - Elsevier
This study investigates the vertical inter-QDs spacing (VIDS) in a coupled bilayer quantum
dots (CBQD) heterostructure using cross-sectional High Resolution Transmission Electron …

Photoabsorption improvement in multi-stacked InGaAs/GaAs quantum dot solar cell with a light scattering rear texture

Y Shoji, K Watanabe, Y Okada - Solar Energy Materials and Solar Cells, 2020 - Elsevier
A 50-layer stacked InGaAs/GaAs quantum dot solar cell (QDSC) grown on GaAs (100) with a
self-organized texture formed on its backside has been fabricated in aim for enhancing the …

[HTML][HTML] Effect of electric field on carrier escape mechanisms in quantum dot intermediate band solar cells

Y Dai, SJ Polly, S Hellstroem, MA Slocum… - Journal of Applied …, 2017 - pubs.aip.org
Carrier escape and recombination from quantum dot (QD) states reduce the probability of
two-step photon absorption (TSPA) by decreasing the available carrier population in the …