[HTML][HTML] Thin film processing of multiferroic BiFeO3: From sophistication to simplicity. A review
C Gumiel, DG Calatayud - Boletín de la Sociedad Española de Cerámica y …, 2022 - Elsevier
The obtaining of BiFeO 3 in the form of a thin film represents a critical issue for its application
in electronic devices since this is the required geometry for the integration of this material in …
in electronic devices since this is the required geometry for the integration of this material in …
Capacitance, conductance, and dielectric characteristics of Al/TiO2/Si diode
HH Gullu, DE Yildiz - Journal of Materials Science: Materials in Electronics, 2021 - Springer
In this study, electrical properties of the Al/TiO 2/p-Si diode structure with an atomic layer
deposited TiO 2 interface layer are investigated by current–voltage (IV IV), capacitance …
deposited TiO 2 interface layer are investigated by current–voltage (IV IV), capacitance …
Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode
In this study, semiconductor device applications of organic material sunset yellow (SY)(C 16
H 10 N 2 Na 2 O 7 S 2) has been investigated. The SY thin film was grown on n-Si via spin …
H 10 N 2 Na 2 O 7 S 2) has been investigated. The SY thin film was grown on n-Si via spin …
Electrical characteristics of organic heterojunction with an alternating benzotriazole and fluorene containing copolymer
The current–voltage (IV IV) and capacitance–voltage (CV CV) characteristics of the organic
heterojunction diode were investigated in a wide temperature range from 80 to 320 K and …
heterojunction diode were investigated in a wide temperature range from 80 to 320 K and …
Impact of Isovalent and Aliovalent Doping on Mechanical Properties of Mixed Phase BiFeO3
In this study, we report the effect of doping in morphotropic BiFeO3 (BFO) thin films on
mechanical properties, revealing variations in the elasticity across the competing phases …
mechanical properties, revealing variations in the elasticity across the competing phases …
Morphology-dependent photo-induced polarization recovery in ferroelectric thin films
JY Wang, G Liu, D Sando, V Nagarajan… - Applied Physics …, 2017 - pubs.aip.org
We investigate photo-induced ferroelectric domain switching in a series of Pb (Zr 0.2 Ti 0.8)
O 3/La 0.7 Sr 0.3 MnO 3 (PZT/LSMO) bilayer thin films with varying surface morphologies by …
O 3/La 0.7 Sr 0.3 MnO 3 (PZT/LSMO) bilayer thin films with varying surface morphologies by …
Co-60 gamma irradiation influences on device characteristics of n-SnO2/p-Si heterojunction diodes
Gamma irradiation induced modifications on the structural, morphological, and
electrochemical characteristics of the n-SnO 2/p-Si heterojunction diodes incorporating their …
electrochemical characteristics of the n-SnO 2/p-Si heterojunction diodes incorporating their …
Structural and electrical characterizations of BiFeO3 capacitors deposited by sol–gel dip coating technique
Bismuth ferrite (BiFeO 3) thin films were deposited by sol–gel dip coating (SGDC) technique
on Si-P (100) and glass substrates to investigate the structural and electrical characteristics …
on Si-P (100) and glass substrates to investigate the structural and electrical characteristics …
A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO2-ZrO2-HfO2 and ZrO2-HfO2-ZrO2 Superlattice Ferroelectric Films
K Li, Y Peng, W Xiao, F Liu, Y Zhang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this article, the effect of starting layer on the ferroelectric properties and reliability of HfO2-
ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) superlattice (SL) films were systematically …
ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) superlattice (SL) films were systematically …
Co-60 gamma irradiation effects on electrical characteristics of HfO2 MOSFETs and specification of basic radiation-induced degradation mechanism
We have studied the effects of Co-60 gamma irradiation on electrical characteristics of metal
oxide semiconductor field effect transistors (MOSFETs) with radio-frequency-sputtered …
oxide semiconductor field effect transistors (MOSFETs) with radio-frequency-sputtered …