As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are
effectively being examined in order to keep the scaling trend. Among these, carbon …

An accurate analytical model of the gate-stack symmetric double-gate (DG) MOSFET using
Green's function approach is developed in this brief. An exact analytical solution to 2-D …

In this research, the performance of the 19 nm single gate MOSFET is enhanced through the
implementation of the high permittivity dielectric material. The MOSFET scaling trends …

An analytical center-potential-based threshold voltage model is developed for a symmetrical
graded-channel dual-material double-gate strained-Si metal–oxide–semiconductor field …

In this work, an innovative architecture of gate underlap junctionless double-gate MOSFET
has been introduced with the idea of using triangular oxide layers to control the electric field …

This paper presents a novel thin film electron–hole bilayer tunnel field-effect transistor based
on an oxide semiconductor tin monoxide (SnO)/silicon heterojunction (TFBTFET), which …

In this paper, we comprehensively assess the unique features, feasibility and limitations of
dual material gate fin field effect transistor for tuning the threshold voltage in nanoscale …

The current research highlights the subthreshold short channel characteristics of a novel
structure namely Dual-material gate strained Trapezoidal strained FinFET. Based on the …

Multi-gate MOSFETs are considered for realizing ultra-low-power circuits due to their
superior channel control capability and short channel effect (SCE) resistance. To achieve …

In this paper, we have incorporated the novel concept of gate material engineering in a three-
dimensional tri-gate TFET structure with SiO 2/HfO 2-stacked gate oxide to reap the dual …