Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …

In this paper, we investigate a polarity controlled electrically doped tunnel FET (ED-TFET)
based on the bandgap engineering for analog/RF applications. The proposed device …

This paper investigates the impact of different interface trap charges (ITCs) on dual-material
gate-oxide-stack double-gate TFET (DMGOSDG-TFET) by introducing localized charges …

In this paper, we investigate the effect of low K dielectric pocket on DC and analog/RF
performance in dual material stack gate oxide double gate tunnel field effect transistor. For …

The fabrication challenges and cost of nanoscale devices have been a major concern in the
field of label free biosensor. Therefore, to overcome these issues, we report for the first time …

Tunnel Field Effect Transistor (TFET) has emerged as a promising candidate for applications
in low power VLSI/ULSI circuit design. TFETs have shown better performance in terms of …

To address the fabrication complexity and cost of nanoscale devices, a dual material control
gate charge-plasma-based tunnel FET (DMCG-CPTFET) is presented for the first time for the …

Silicon nanowire reconfigurable field effect transistors (SiNW RFETs) abolish the physical
separation of n-type and p-type transistors by taking up both roles in a configurable way …

In this paper, we investigate for the first time effect of positive (donor) and negative
(acceptor) interface trap charges on the performance of proposed heterogeneous gate …

Schottky barrier reconfigurable field effect transistors (SB-RFETs) have attracted great
attention in sub-nanometer devices. However, the poor current drivability limits its further …