Self-assembled nanowires on semiconductor surfaces
A number of different families of nanowires which self-assemble on semiconductor surfaces
have been identified in recent years. They are particularly interesting from the standpoint of …
have been identified in recent years. They are particularly interesting from the standpoint of …
Dipole-directed assembly of lines of 1, 5-dichloropentane on silicon substrates by displacement of surface charge
One-dimensional nanostructures at silicon surfaces have potential applications in nanoscale
devices. Here we propose a mechanism of dipole-directed assembly for the growth of lines …
devices. Here we propose a mechanism of dipole-directed assembly for the growth of lines …
Robust one-dimensional metallic band structure of silicide nanowires
HW Yeom, YK Kim, EY Lee, KD Ryang, PG Kang - Physical review letters, 2005 - APS
Angle-resolved photoemission (ARP) is employed to investigate the electronic structure of
an extremely anisotropic form of nanocrystals—GdSi 2-x nanowires on Si (100). Using a …
an extremely anisotropic form of nanocrystals—GdSi 2-x nanowires on Si (100). Using a …
Boron nitride monolayer growth on vicinal Ni (1 1 1) surfaces systematically studied with a curved crystal
L Fernández, AA Makarova, C Laubschat… - 2D …, 2019 - iopscience.iop.org
The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped
Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable …
Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable …
Atomic size effects studied by transport in single silicide nanowires
Ultrathin metallic silicide nanowires with extremely high aspect ratios can be easily grown,
eg, by deposition of rare earth elements on semiconducting surfaces. These wires play a …
eg, by deposition of rare earth elements on semiconducting surfaces. These wires play a …
An STM study of the Si (0 0 1)(2× 7)–Gd, Dy surface
Both Gd and Dy induce two different reconstructions of the Si (001) surface with 2× 4 and 2×
7 unit cells. Detailed examination by scanning tunneling microscopy shows that the structure …
7 unit cells. Detailed examination by scanning tunneling microscopy shows that the structure …
Self-assembled endotaxial α-FeSi2 nanowires with length tunability mediated by a thin nitride layer on (001) Si
SY Chen, HC Chen, LJ Chen - Applied physics letters, 2006 - pubs.aip.org
Endotaxial growth of self-assembled α-Fe Si 2 nanowires (NWs) on (100) Si has been
achieved by combining reactive deposition epitaxy and nitride-mediated epitaxy. The length …
achieved by combining reactive deposition epitaxy and nitride-mediated epitaxy. The length …
Symmetry in strain engineering of nanomembranes: making new strained materials
Strain in a material changes the lattice constant and thereby creates a material with new
properties relative to the unstrained, but chemically identical, material. The ability to alter the …
properties relative to the unstrained, but chemically identical, material. The ability to alter the …
Tb silicide nanowire growth on planar and vicinal Si (001) surfaces
S Appelfeller, S Kuls, M Dähne - Surface Science, 2015 - Elsevier
Scanning tunneling microscopy and low energy electron diffraction were used to investigate
the growth of Tb silicide nanowires on Si (001) and its dependence on Tb coverage …
the growth of Tb silicide nanowires on Si (001) and its dependence on Tb coverage …
Self-organization of mesoscopically ordered parallel Gd-silicide nanowire arrays on a Si (110)-16× 2 surface: A massively parallel active architecture
IH Hong, YF Tsai, TM Chen - Applied Physics Letters, 2011 - pubs.aip.org
A perfect self-organization of large-area, highly regular parallel arrays, consisting of
uniformly spaced, epitaxial Gd-silicide nanowires with an identical width and a typical …
uniformly spaced, epitaxial Gd-silicide nanowires with an identical width and a typical …