[HTML][HTML] Compact modeling of a 3.3 kv sic mosfet power module for detailed circuit-level electrothermal simulations including parasitics
In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon
carbide MOSFET power module. The approach is based on a full circuital representation of …
carbide MOSFET power module. The approach is based on a full circuital representation of …
Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering
The past decade has seen the emergence of ab initio computational methods for calculating
phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic …
phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic …
TCAD device modelling and simulation of wide bandgap power semiconductors
Technology computer-aided Design (TCAD) is essential for devices technology
development, including wide bandgap power semiconductors. However, most TCAD tools …
development, including wide bandgap power semiconductors. However, most TCAD tools …
Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices
A El Hadi Khediri, B Benbakhti, JC Gerbedoen… - Applied Physics …, 2022 - pubs.aip.org
The impact of Cubic Silicon Carbide (3C-SiC) transition layer on breakdown voltage and
frequency performance of GaN high electron mobility transistors is investigated. A …
frequency performance of GaN high electron mobility transistors is investigated. A …
[HTML][HTML] The influence of the conduction band engineering on the perovskite solar cell performance
DNQ Agha, QT Algwari - Results in Optics, 2022 - Elsevier
The present work investigated numerically, using SCAPS software, the impact of conduction
band alignment between the absorber and electron transport layer (ETL) on the perovskite …
band alignment between the absorber and electron transport layer (ETL) on the perovskite …
On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes
AE Arvanitopoulos, M Antoniou… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Major recent developments in growth expertise related to the cubic polytype of Silicon
Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication …
Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication …
Vacancy-induced enhancement of electron–phonon coupling in cubic silicon carbide and its relationship to the two-temperature model
S Al Smairat, J Graham - Journal of Applied Physics, 2021 - pubs.aip.org
The electron–phonon coupling factor was calculated for both pristine and vacancy-rich 3C-
SiC. Ab initio calculations were performed within the framework of the density functional …
SiC. Ab initio calculations were performed within the framework of the density functional …
3C-SiC-on-Si MOSFETs: overcoming material technology limitations
The cubic polytype (3C-) of silicon carbide (SiC) is an emerging semiconductor technology
for power devices. The featured isotropic material properties along with the wide band gap …
for power devices. The featured isotropic material properties along with the wide band gap …
Superinjection of holes in homojunction diodes based on wide-bandgap semiconductors
IA Khramtsov, DY Fedyanin - Materials, 2019 - mdpi.com
Electrically driven light sources are essential in a wide range of applications, from indication
and display technologies to high-speed data communication and quantum information …
and display technologies to high-speed data communication and quantum information …
Study of p-(6H, 4H, 3C) SiC/n-GaN Heterojunction SDR, DDR IMPATT Diodes
Y Dai, Y Li, L Gao, J Zuo, C Chen… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
In this paper, three polytypes of p-(6H, 4H, 3C) SiC and n-GaN heterojunction single-drift
(SDR), and double-drift (DDR) impact-ionization-avalanche-transit-time (IMPATT) diodes are …
(SDR), and double-drift (DDR) impact-ionization-avalanche-transit-time (IMPATT) diodes are …