Toward successful integration of porous low-k materials: Strategies addressing plasma damage
The increasing sensitivity of porous low dielectric constant materials to process damage
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …
Chemical mechanical polishing of chemical vapor deposited Co films with minimal corrosion in the Cu/Co/Mn/SiCOH patterned structures
This work describes the dissolution and corrosion of chemical vapor deposited (CVD) Co
films determined using aqueous mixtures of H 2 O 2, oxalic acid (OA) and nicotinic acid (NA) …
films determined using aqueous mixtures of H 2 O 2, oxalic acid (OA) and nicotinic acid (NA) …
Manganese (II) molecular sources for plasma-assisted CVD of Mn oxides and fluorides: From precursors to growth process
A viable route to manganese-based materials of high technological interest is plasma-
assisted chemical vapor deposition (PA-CVD), offering various degrees of freedom for the …
assisted chemical vapor deposition (PA-CVD), offering various degrees of freedom for the …
Kinetics of adsorption of methylcyclopentadienyl manganese tricarbonyl on copper surfaces and implications for the atomic layer deposition of thin solid films
M Bouman, F Zaera - The Journal of Physical Chemistry C, 2016 - ACS Publications
The kinetics of the thermal chemistry of methylcyclopentadienyl manganese tricarbonyl on
copper surfaces was followed by infrared absorption spectroscopy analysis of the gas …
copper surfaces was followed by infrared absorption spectroscopy analysis of the gas …
In-situ surface and interface study of atomic oxygen modified carbon containing porous low-κ dielectric films for barrier layer applications
The surface treatment of ultralow-κ dielectric layers by exposure to atomic oxygen is
presented as a potential mechanism to modify the chemical composition of the dielectric …
presented as a potential mechanism to modify the chemical composition of the dielectric …
Potassium periodate-based solutions for minimizing galvanic corrosion at the Cu-Mn interface and for polishing the associated Cu interconnect structures
AM Chockalingam, URK Lagudu… - ECS Journal of Solid …, 2013 - iopscience.iop.org
One of challenge associated with a self-forming Mn barrier for Cu interconnects in sub-22
nm devices is galvanic corrosion that can occur at the Cu-Mn interface during chemical …
nm devices is galvanic corrosion that can occur at the Cu-Mn interface during chemical …
Reaction of methylcyclopentadienyl manganese tricarbonyl on silicon oxide surfaces: implications for thin film atomic layer depositions
M Bouman, X Qin, V Doan, BLD Groven… - Organometallics, 2014 - ACS Publications
The thermal chemistry of methylcyclopentadienyl manganese tricarbonyl (MeCpMn (CO) 3)
on silicon oxide surfaces was characterized by a combination of analytical techniques …
on silicon oxide surfaces was characterized by a combination of analytical techniques …
Chemical mechanical polishing and planarization of Mn-based barrier/Ru liner films in Cu interconnects for advanced metallization nodes
Mn-based (referred to simply as Mn in the following) barrier/Ru liner stack has been
proposed to replace TaN/Ta barrier-liner in Cu interconnects for 7 nm and 5 nm technology …
proposed to replace TaN/Ta barrier-liner in Cu interconnects for 7 nm and 5 nm technology …
Chemical treatment of low-k dielectric surfaces for patterning of thin solid films in microelectronic applications
A protocol has been developed to selectively process low-k SiCOH dielectric substrates in
order to activate or deactivate them toward the deposition of thin solid films by chemical …
order to activate or deactivate them toward the deposition of thin solid films by chemical …
Ultrathin ZrBxOy films as diffusion barriers in Cu interconnects
Y Meng, ZX Song, JH Chen, F Ma, YH Li, JF Wang… - Vacuum, 2015 - Elsevier
Ultra-thin ZrB x O y films 5 nm in thickness were prepared by radio-frequency (rf) magnetron
sputtering. The thermal stability and the barrier performance against the inter-diffusion …
sputtering. The thermal stability and the barrier performance against the inter-diffusion …