Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

The reduction in electronic recombination losses by the passivation of silicon surfaces is a
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …

Dramatic changes in the physical properties of composites occur when filler particles form a
percolating network through the composite, particularly when the difference between the …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

In order to improve the properties of Hf 2 Si, we design six transition metals (TM= Zr, Nb, Mo,
Tc, W and Re) doped in Hf 2 Si. The effect of TM elements on the properties of Hf 2 Si was …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

The ever increasing requirements for electrical performance of on-chip wiring has driven
three major technological advances in recent years. First, copper has replaced Aluminum as …

The importance of statistical analyses on 2D materials-based electronic devices and circuits
is sometimes overlooked. Here the authors discuss the most pressing integration issues for …

We present an overview of various aspects of the self-assembly of organic monolayers on
silicon substrates for molecular electronics applications. Different chemical strategies …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …