Anisotropic wet etching of a novel micro-texture structure for an Al/n-Si/Al metal–semiconductor–metal photodetector fabrication

K Suttijalern, S Niemcharoen - Journal of Micromechanics and …, 2021 - iopscience.iop.org
Micro-electro-mechanical system fabrication involves molding on a single substrate.
Chemical wet etching is common in these systems because it can provide a very high etch …

Conformal AZ5214-E resist deposition on patterned (1 0 0) InP substrates

P Eliáš, D Gregušová, J Martaus… - … of Micromechanics and …, 2005 - iopscience.iop.org
A draping technique was studied to deposit thin, visco-elastic AZ5214-E resist layers from a
water surface over planar and patterned substrates. A visco-elastic AZ5214-E layer forms on …

New approach to local anodic oxidation of semiconductor heterostructures

J Martaus, D Gregušová, V Cambel, R Kúdela, J Šoltýs - Ultramicroscopy, 2008 - Elsevier
We have experimentally explored a new approach to local anodic oxidation (LAO) of a
semiconductor heterostructures by means of atomic force microscopy (AFM). We have …

Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate

GA Chappell, B Guilhabert, T Garcia, K Zhao… - Optical Materials …, 2020 - opg.optica.org
Wide bandgap II-VI semiconductors, lattice-matched to InP substrates, show promise for use
in novel, visible wavelength photonic devices; however, release layers for substrate removal …

CCl4-based RIE pattern transfer into facets of mesas formed by wet etching in InP (100)

P Eliáš, Š Haščík, J Martaus, I Kostič… - … and solid-state letters, 2005 - iopscience.iop.org
We performed reactive ion etching (RIE) in plasma to transfer patterns into (100),(110), and
(211) A wet-etch exposed in InP (100) wafers. At a power, pressure, self-bias, and substrate …

Study of ordinary facets revealed in (1 0 0) InP by etching in HCl

P Eliáš, J Šoltýs, I Kostič - Materials Science and Engineering: B, 2007 - Elsevier
We studied the tilt, curvature and surface morphology of side facets of mesa ridges revealed
in (100) InP by etching in 3HCl (37%): 1H3PO4 (85%) through InGaAs mask. The ridges lay …

Conformal, planarizing and bridging AZ5214-E layers deposited by a 'draping'technique on non-planar III–V substrates

P Eliáš, P Štrichovanec, I Kostič… - … of Micromechanics and …, 2006 - iopscience.iop.org
A draping technique was tested for the deposition of positive-tone AZ5214-E photo-resist
layers on non-planar (1 0 0)-oriented III–V substrates, which had a variety of three …

Indium phosphide MEMS cantilever waveguides for chemical sensing with integrated optical readout

NP Siwak - 2007 - search.proquest.com
This thesis presents the development towards an integrated, monolithic, micro-electro-
mechanical system (MEMS) cantilever waveguide resonator chemical sensor using the III-V …

[PDF][PDF] AFM nanolitografia a jej aplikácia na vybrané polovodičové štruktúry

J Šoltýs - Dizertačná práca, Bratislava, Júl, 2005 - elu.sav.sk
Nanotechnológia je v súčasnosti rýchlo sa rozvíjajúci odbor výskumu a vývoja vo viacerých
vedných disciplínach. Vo všeobecnosti pod týmto pojmom označujeme technologický odbor …

Fabrication and process development for an integrated optical MEMS microsystem in indium phosphide

NP Siwak - 2013 - search.proquest.com
This dissertation presents the design, fabrication, and evaluation of the first monolithically
integrated MEMS resonant sensor system realized in the InP-InGaAs material family. The …