Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
Multivariate optimization of fecal bioindicator inactivation by coupling UV-A and UV-C LEDs
The development of new technologies for water recycling is a priority for arid and semi-arid
countries such as those of the Mediterranean basin. The aim of this study was to test the …
countries such as those of the Mediterranean basin. The aim of this study was to test the …
[HTML][HTML] An AlGaN tunnel junction light emitting diode operating at 255 nm
We report on the demonstration of high-performance tunnel junction deep ultraviolet (UV)
light-emitting diodes (LEDs) by using plasma-assisted molecular beam epitaxy. The device …
light-emitting diodes (LEDs) by using plasma-assisted molecular beam epitaxy. The device …
Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface
W Tian, M Liu, S Li, C Liu - Optical Materials Express, 2023 - opg.optica.org
In AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the large valence band
offset between the Al-rich electron blocking layer (EBL) and p-AlGaN hole supplier weakens …
offset between the Al-rich electron blocking layer (EBL) and p-AlGaN hole supplier weakens …
Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop
DJ Myers, K Gelžinytė, AI Alhassan, L Martinelli… - Physical Review B, 2019 - APS
Energy measurements of electrons emitted from a semiconductor can reveal internal
physical processes hitherto elusive. Signatures of hot-electron processes in heterostructures …
physical processes hitherto elusive. Signatures of hot-electron processes in heterostructures …
Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer
P Sun, X Bao, S Liu, C Ye, Z Yuan, Y Wu, S Li… - Superlattices and …, 2015 - Elsevier
The properties of 298 nm AlGaN based deep ultraviolet light-emitting diodes (UV LEDs) with
different Al mole compositions in the conventional electron blocking layer (EBL) are …
different Al mole compositions in the conventional electron blocking layer (EBL) are …
Effect of electron blocking layer doping and composition on the performance of 310 nm light emitting diodes
T Kolbe, A Knauer, J Rass, HK Cho, S Hagedorn… - Materials, 2017 - mdpi.com
The effects of composition and p-doping profile of the AlGaN: Mg electron blocking layer
(EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated …
(EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated …
The origin of the high ideality factor in AlGaN‐based quantum well ultraviolet light emitting diodes
The ideality factor of AlGaN‐based quantum well ultraviolet light emitting diodes (LEDs) is
found to be dependent on both material quality and the presence of electron blocking layer …
found to be dependent on both material quality and the presence of electron blocking layer …
Efficient carrier‐injection and electron‐confinement in UV‐B light‐emitting diodes
T Kolbe, J Stellmach, F Mehnke, MA Rothe… - … status solidi (a), 2016 - Wiley Online Library
The effects of the aluminum content x and the magnesium doping concentration in the Al Ga
N: Mg electron blocking layer on the emission characteristics of ultraviolet light‐emitting …
N: Mg electron blocking layer on the emission characteristics of ultraviolet light‐emitting …
Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes
This study systematically investigates the optical performance of N-polar deep-ultraviolet
light-emitting diodes (DUV LEDs) in consideration of different quantum structures in the …
light-emitting diodes (DUV LEDs) in consideration of different quantum structures in the …