▪ Abstract This paper reviews the literature on size effects in ferroelectric materials, with an
emphasis on thin film perovskite ferroelectrics. The roles of boundary conditions, defect …

Recent progress in the development of barium strontium titanate thin film varactors for room
temperature tunable microwave devices applications is reviewed, with emphasis on efforts …

Al2O3 films with thicknesses ranging from 30 to 3540 Å were grown in a viscous flow reactor
using atomic layer deposition (ALD) with trimethylaluminum and water as the reactants …

In atomically thin two-dimensional (2D) materials, free charges have quantized energy
levels in one spatial dimension, while they are mobile in the other two.[1] The interest in …

Capacitors are a mainstay of electronic integrated circuits and devices, where they perform
essential functions such as storing electrical charge, and blocking direct current while …

In this paper, the feasibility of an indium–gallium oxide (In2 (1-x) Ga2 x O y) film through
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …

Electroceramics research is driven by technology and device applications. This growing field
includes a vast number of magnetic, dielectric, ionically conducting, semiconducting, and …

Dynamic random access memory (DRAM) is used as the main memory of every modern
computer, due to its high density, high speed and efficient memory function. Each DRAM cell …

Recent experimental measurements of large flexoelectric coefficients in ferroelectric
ceramics suggest that strain gradients can affect the polarization and permittivity behaviour …

The recent progress in the metal‐insulator‐metal (MIM) capacitor technology is reviewed in
terms of the materials and processes mostly for dynamic random access memory (DRAM) …