Hybrid halide perovskites have been demonstrated to be prospective materials in
optoelectronic devices due to their outstanding photoelectric properties and facile …

In this study, optical multispectral sensors based on perovskite semiconductors have been
proposed, simulated, and characterized. The perovskite material system combined with the …

Light loss is one of the main factors affecting the quantum efficiency of photodetectors.
Several approaches have been proposed to mitigate light loss and improve the quantum …

Near-infrared (NIR) photodetectors are crucial to various applications, including face
recognition, night vision, and laser detection and ranging (LiDAR). However, conventional …

H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state
components formed in or on a common substrate including semiconductor components …

We present a germanium “Ge-on-Si” CMOS image sensor with backside illumination for the
near-infrared (NIR) electromagnetic waves (wavelength range 300 to 1700 nm) detection …

We study the nano-and micro-structures that increase the optical efficiency (OE) of the
complementary metal oxide semiconductor (CMOS) image pixels in visible and infrared. We …

With the advent of high-precision nanoscale lithography technology, high-resolution image
sensing has experienced rapid development in recent years. Currently, mainstream …

The optimization of silicon photodiode-based CMOS sensors with backside-illumination for
300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a …

In this paper, the influences of the depth and width of the oxide trench isolation between
pixels, pixel epitaxial layer thickness for different impurity doping concentrations, and light …