Failure mechanisms driven reliability models for power electronics: A review

OE Gabriel, DR Huitink - Journal of …, 2023 - asmedigitalcollection.asme.org
Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …

Chip design with machine learning: a survey from algorithm perspective

W He, X Li, X Song, Y Hao, R Zhang, Z Du… - Science China …, 2023 - Springer
Chip design with machine learning (ML) has been widely explored to achieve better
designs, lower runtime costs, and no human-in-the-loop process. However, with tons of …

GridNet: Fast data-driven EM-induced IR drop prediction and localized fixing for on-chip power grid networks

H Zhou, W Jin, SXD Tan - … of the 39th International Conference on …, 2020 - dl.acm.org
Electromigration (EM) is a major failure effect for on-chip power grid networks of deep
submicron VLSI circuits. EM degradation of metal grid lines can lead to excessive voltage …

Effects of GNSs addition on the electromigration of Sn58Bi and Cu-core Sn58Bi joint

P Liu, W Guo, P Wu - Journal of Materials Science, 2022 - Springer
Abstract Graphene nanosheets (GNSs) modified Sn58Bi and Cu-core Sn58Bi solder joints
were manufactured in this work. The evolution of microstructure and growth of intermetallic …

Calibration and efficient evaluation of electromigration lifetime for interconnect wire sizing of multi-port networks

L Milor, S Ghosh - Microelectronics Reliability, 2023 - Elsevier
A canonical form of the hydrostatic stress equations for electromigration is proposed to
determine the minimum number of parameters to calibrate the model. An efficient …

Recent progress in physics-based modeling of electromigration in integrated circuit interconnects

WS Zhao, R Zhang, DW Wang - Micromachines, 2022 - mdpi.com
The advance of semiconductor technology not only enables integrated circuits with higher
density and better performance but also increases their vulnerability to various aging …

System-level simulation of electromigration in a 3 nm cmos power delivery network: The effect of grid redundancy, metallization stack and standard-cell currents

H Zahedmanesh, I Ciofi, O Zografos… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
A physics-based system-level electromigration (EM) modelling platform is employed to
simulate EM and its impact on the IR drop from the supply voltage to the standard-cells for a …

Linear time electromigration analysis based on physics-informed sparse regression

L Chen, W Jin, M Kavousi… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this work, we propose a novel physics-informed sparse regression (PISR) framework to
solve stress evolution (described by Korhonen's equations) in general multisegment wires …

CacheEM: For reliability analysis on cache memory aging due to electromigration

R Zhang, T Liu, K Yang, L Milor - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Electromigration (EM) is crucial for interconnect reliability. This article introduces the
implementation and application of CacheEM which targets SRAM cache memory aging due …

Fast electromigration stress analysis considering spatial joule heating effects

M Kavousi, L Chen, SXD Tan - 2022 27th Asia and South …, 2022 - ieeexplore.ieee.org
Temperature gradient due to Joule heating has huge impacts on the electromigration (EM)
induced failure effects. However, Joule heating and related thermomigration (TM) effects …