Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

Condensation is of paramount importance in numerous technological applications where
phase change processes take place. The physical nature of condensation from vapor to …

CeO 2 thin films were deposited on silicon and silicon nitride substrates by magnetron
sputtering at room temperature and annealed at 400 and 600° C in air and vacuum …

Rare earth oxide (REO) atomic layer deposition (ALD) processes are investigated for
hydrophobic coatings. Thermal and plasma-enhanced ALD (PE-ALD) Er2O3 and Dy2O3 are …

Thin films of cerium dioxide (CeO 2) were deposited by atomic layer deposition (ALD) at
250° C on both Si and titanium nitride (TiN) substrates. The ALD growth produces CeO 2 …

We systematically investigated the effects of Y doping in HfO 2 dielectric layer, focusing on
structural phase transformation and the dielectric properties of the resultant films. Y doping …

The relatively low thermal stability of HfO2 films severely affects the performance of
semiconductor devices. For instance, the low crystallization temperature of HfO2 (∼ 500° C) …

In this study, to enhance the stability of the cathode platinum (Pt) catalyst in polymer
electrolyte membrane fuel cells, cerium oxide (CeOx) was deposited by plasma‐enhanced …

We present results of density functional theory calculations on the phonon dispersion and
elastic constants of bulk ceria (CeO 2) as a function of positive and negative isotropic strain …

We have systematically investigated the electronic structure of CeO 2 dielectric by plasma
enhanced atomic layer deposition (PE-ALD). The CeO 2 films were deposited by using …