The fabrication of low‐resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n‐type SiC, Ni‐based metallization is most …

This chapter reviews the status of SiC Schottky barrier diode development. The
fundamentals of Schottky barrier diodes are first provided, followed by the review of high …

Nickel-based contacts, deposited on 4H-SiC C-face substrates, were annealed at
temperatures ranging from 800 to 1040 C and the phase composition of the contact layers …

This book will provide useful information to material growers and evaluators, device design
and processing engineers as well as potential users of SiC technologies. This book will help …

Electrical contact properties and graphitic structures of metal/carbon/4H–SiC structures are
investigated. Metals studied include Ni, Co, Cr, NiCr, Ti, W, Mo, Al, and Au. Ohmic contacts …

The reactions induced in a vacuum furnace (5× 10− 7 Torr) between an electron-beam-
evaporated Ni film a few hundred nm thick and a (001)-oriented (ie Si-face-oriented) single …

Ni/WSi/Ti/Pt Ohmic contacts to n-SiC were investigated as a function of annealing
temperatures up to 1000° C. Annealing at temperatures between 950 and 1000° C yielded …

Ni2Si, NiSi and NiSi2 contacts were prepared on n-type 4H–and 6H–SiC (0001) by
deposition of Ni and Si multilayers in the respective stoichiometry after high-temperature …

We demonstrate a nondestructive characterization of buried interfaces in metal/wide-
bandgap semiconductor contacts by using scanning internal photoemission microscopy. For …

Ohmic contact formation of Ni/C film on n-type 4H-SiC is investigated. A carbon interfacial
layer between Ni film and SiC is used to improve ohmic contact properties. The contact …