The development of transparent p‐type oxide semiconductors with good performance may
be a true enabler for a variety of applications where transparency, power efficiency, and …

One of the crucial challenges that face the wide-spread implementation of flexible and
transparent electronics is the lack of high performance p-type semiconductor material. Cu 2 …

The field of flexible electronics has rapidly expanded over the last decades, pioneering
novel applications, such as wearable and textile integrated devices, seamless and …

CuI-based p-type semiconducting and transparent oxide materials have recently gained
renewed interest for potential applications in energy-related devices. As a counter-part of n …

High performance p-type thin-film transistor (p-TFT) was realized by a simple process of
reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field …

Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric
atomic layer deposition (AALD) at 225C and below | AIP Advances | AIP Publishing Skip to Main …

P-type copper oxide (Cu x O) thin-film transistors (TFTs) with enhanced switching
characteristics were fabricated by introducing a sputter-processed capping layer capable of …

The high Hall hole mobility (μ Hall) of cuprous oxide (Cu 2 O) has caused great interest in
using this semiconductor for p-type devices in a future complementary metal-oxide …

A high-mobility Cu 2 O thin film was fabricated using the mist chemical vapor deposition
(CVD) method. This was achieved by suppressing the contamination from nitrogen …

Cuprous oxide (Cu 2 O) is a promising material for large scale photovoltaic applications. The
efficiencies of thin film structures are, however, currently lower than those for structures …