Resistivity size effect in tantalum layers
D Syracuse - 2024 - dspace.rpi.edu
In situ and ex situ transport measurements at 293 and 77 K on epitaxial Ta (001)/MgO (001)
and Ta (110)/Al2O3 (112 ̅0) layers with thickness d= 7-350 nm are employed to quantify …
and Ta (110)/Al2O3 (112 ̅0) layers with thickness d= 7-350 nm are employed to quantify …