Modifications of surface morphology significantly improve integration possibilities and
properties of materials in NEMS, MEMS and µTAS, especially of fused silica. Self-organized …

The formation of silicon carbide nanoclusters on silicon substrates by MBE deposition of
carbon provides a variety of applications, such as antidot structures, nanowire …

We have studied the size, shape transition, and nucleation sites of self-assembled cobalt
silicide clusters on Si (111)− 7× 7 using scanning tunneling microscopy. Step decoration of …

SiC nanostructures combine the physical properties of bulk SiC with that induced by the
reduction of their spatial dimensionality and thus can be considered as a new material …

Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate Page 1
1063-7850/04/3008- $26.00 © 2004 MAIK “Nauka/Interperiodica” 0641 Technical Physics …

The process of the spatial ordering of SiC nanoclusters on the step edges on Si surfaces
was studied by means of multi-scale computer simulation. The evolution of cluster arrays on …

Solid source molecular beam epitaxy was applied to create silicon carbide nanoclusters on
silicon. The island size distribution can be controlled by an appropriate substrate …

We demonstrate the growth of reactive metal Co and Fe induced magic clusters on Si (111)-
(7?? 7). In situ scanning tunneling microscopy imaging (STM) studies show three equivalent …

Описан комплекс экспериментально-теоретических исследований роста
нанокластеров SiC на подложке кремния путем молекулярно-лучевой эпитаксии и …