Recent progress in red light-emitting diodes by III-nitride materials

D Iida, K Ohkawa - Semiconductor Science and Technology, 2021 - iopscience.iop.org
GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light …

M Khoury, H Li, P Li, YC Chow, B Bonef, H Zhang… - Nano Energy, 2020 - Elsevier
We demonstrate efficient, polarized and monolithic white semipolar (20–21) InGaN light-
emitting diodes (LEDs) grown on high crystal quality 4-inch (20–21) GaN/sapphire template …

560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates

M Khoury, H Li, B Bonef, T Mates, F Wu, P Li… - Optics …, 2020 - opg.optica.org
We demonstrate InGaN-based semipolar 560? nm micro-light-emitting diodes with 2.5%
EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and …

MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates

RC White, M Khoury, F Wu, S Keller… - Semiconductor …, 2020 - iopscience.iop.org
The MOCVD growth of InGaN: Si base layers on a semi-relaxed InGaN substrate, where
growth is generally difficult due to the presence of V-pits, is examined. These V-pits can …

Recent developments in semipolar InGaN laser diodes

A Das - Semiconductors, 2021 - Springer
Group III-nitride semiconductors (GaN, AlN, and InN) are attractive materials for a wide
range of electronic and photonic applications. The most widely employed growth plane for III …

Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers

H Li, H Zhang, J Song, P Li, S Nakamura… - Applied Physics …, 2020 - pubs.aip.org
ABSTRACT III-nitrides based light-emitting diodes and laser diodes (LDs) have shown great
success as solid-state lighting sources, but the development of common c-plane (0001) …

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping

J Liu, H Qie, Q Sun, M Feng, J Wang, X Sun… - Optics …, 2020 - opg.optica.org
Very limited 1-3 pairs of quantum-wells (QWs) are preferred for GaN-based laser diodes
(LDs), which require more careful engineering of the carrier transport than LEDs. In this …

Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes

Y Hou, D Zhao, P Chen, F Liang, Z Liu, J Yang - Optics Express, 2021 - opg.optica.org
We propose a stepped upper waveguide layer (UWG) to improve the hole injection
efficiency of GaN-based laser diodes (LDs), and investigate its effect on the performance of …

Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template

H Li, H Zhang, P Li, MS Wong, YC Chow… - Journal of Physics …, 2020 - iopscience.iop.org
Semipolar/nonpolar GaN-based optoelectronic devices become attractive due to several
advantages such as alleviation of quantum-confinement Stark effect, high polarization ratio …

[HTML][HTML] Comparative investigation into key optoelectronic characteristics of semipolar InGaN blue laser diodes: A strategy to mitigate quantum-confine stark effect

S Roy, SMT Ahsan, N Mondol, MM Hasan, D Kundu… - Results in Physics, 2022 - Elsevier
In recent years, semipolar InGaN-based blue laser diodes (LDs) have raised indescribable
appeal within solid-state lighting industry as promising alternatives for currently available …