Performance enhancement of GaN-based light emitting diodes by the interaction with localized surface plasmons
The effects of localized surface plasmons (LSPs) on the enhancement of
photoluminescence and electroluminescence efficiency of GaN-based light-emitting diode …
photoluminescence and electroluminescence efficiency of GaN-based light-emitting diode …
Enhanced light extraction efficiency and modulation bandwidth of deep-ultraviolet light-emitting diodes with Al nanospheres
X Hu, X Liang, L Tang, W Liu - Crystals, 2022 - mdpi.com
Planar, nanopillar and Al nanosphere structure AlGaN-based deep-ultraviolet light-emitting
diodes (DUV-LEDs) were numerically investigated via a three-dimensional finite difference …
diodes (DUV-LEDs) were numerically investigated via a three-dimensional finite difference …
Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer
2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times
increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well …
increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well …
Quantum efficiency control of InGaN/GaN multi-quantum-well structures using Ag/SiO2 core-shell nanoparticles
Photoluminescence (PL) efficiency increase up to 2.8 times was observed for GaN/InGaN
multi-quantum-well (MQW) structures as a result of deposition of a thin layer of about 40-nm …
multi-quantum-well (MQW) structures as a result of deposition of a thin layer of about 40-nm …
Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures
AY Polyakov, JH Yun, HK Ahn… - physica status solidi …, 2015 - Wiley Online Library
Double heterostructures AlGaN/GaN/AlGaN grown by hydride vapor phase epitaxy and
designed for use as light emitting diodes for 360 nm wavelength were patterned by shallow …
designed for use as light emitting diodes for 360 nm wavelength were patterned by shallow …
Photoluminescence enhancement in GaN/InGaN multi-quantum well structures as a function of quantum well numbers: Coupling behaviors of localized surface …
Photoluminescence (PL) efficiency enhancement produced by deposition of Ag/SiO 2
core/shell nanoparticles (NPs) on the GaN/InGaN multi-quantum well structure was studied …
core/shell nanoparticles (NPs) on the GaN/InGaN multi-quantum well structure was studied …
Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures
Nonpolar (11-20) a-GaN/InGaN quantum well (QW) structures were grown by metalorganic
chemical vapor deposition on r-plane (1-102) sapphire substrate using a two-stage growth …
chemical vapor deposition on r-plane (1-102) sapphire substrate using a two-stage growth …