High power and narrow vertical divergence lasers for the 980 nm wavelength range based
on the photonic crystal (PC) structure are investigated. The structure of the PC layers and the …

We report on the transverse single-mode emission from InGaAs/GaAs quantum well edge-
emitting lasers with broadened waveguide. The lasers are based on coupled large optical …

A combination of advanced light engineering concepts enables a substantial improvement
in photon extraction efficiency of micro–cavity–based single–photon sources in the telecom …

High-power high-brightness super large optical cavity laser diodes with an optimized
epitaxial structure are investigated at the wavelength of 980 nm range. The thicknesses of P …

900 nm longitudinal photonic band crystal (PBC) laser diodes with optimized epitaxial
structure are fabricated. With a same calculated fundamental-mode divergence, stronger …

Extremely large epitaxial waveguides with thickness t WG= 8.6 μm enable diode lasers with
very narrow vertical divergence angle. We demonstrate that when such designs are …

We present results on investigations of 9xx nm, GaAs-based diode lasers with 100 μm wide,
4 mm long stripes operating at temperatures between 200 and 300 K. As temperatures are …

A recognized drawback of edge-emitting diode lasers is their high divergence and elliptical
beam shape since the first diode laser was demonstrated. In this paper, we demonstrated …

The considerations in the epitaxial and longitudinal design of a supper-large-optical-cavity
structure di⁃ ode laser in the 976-nm band are numerically studied and presented here …

We report recent developments on 980-nm single-transverse-mode ridge-waveguide (RW)
lasers with high efficiency and low-vertical divergence. RW lasers fabricated with 7-μm-wide …