The longitudinal resistance R xx of the SrTiO 3/LaAlO 3 interface with magnetic fields
applied perpendicular to the interface has an antisymmetric term [namely, R xx (H)≠ R xx …

We analyze the critical behavior of the dephasing rate induced by short-range electron–
electron interaction near an Anderson transition of metal–insulator or quantum Hall type …

The observation of large nonlocal resistances near the Dirac point in graphene has been
related to a variety of intrinsic Hall effects, where the spin or valley degrees of freedom are …

The plateau–insulator (PI) transition in the quantum Hall regime, in remarkable contrast to
the plateau–plateau (PP) transition, exhibits very special features that enable one for the first …

Scaling ideas in the theory of the quantum Hall effect are fundamentally based on
topological principles in Anderson localization theory. These concepts have a very general …

The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on
the surface of a cylinder. This special topology leads to a spatially varying filling factor along …

Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells
represent a promising material platform for future spintronic applications due to their …

We report on quantum-interference measurements in top-gated Hall bars of monolayer
graphene epitaxially grown on the Si face of SiC, in which the transition from negative to …

High-field magnetotransport experiments provide an excellent tool to investigate the plateau-
insulator phase transition in the integral quantum Hall effect. Here we review recent low …

We have investigated the Hall resistance RH near the plateau-insulator transition of a two-
dimensional electron gas in the quantum critical regime. High-field magnetotransport data …