Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
N Islam, MFP Mohamed, MFAJ Khan, S Falina… - Crystals, 2022 - mdpi.com
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
First‐principles theory of acceptors in nitride semiconductors
Acceptor defects and impurities play a critical role in the performance of GaN‐based
devices. Mg is the only acceptor impurity that gives rise to p‐type conductivity, while other …
devices. Mg is the only acceptor impurity that gives rise to p‐type conductivity, while other …
[HTML][HTML] Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
A theoretical framework for a general approach to reduce point defect density in materials
via control of defect quasi Fermi level (dQFL) is presented. The control of dQFL is achieved …
via control of defect quasi Fermi level (dQFL) is presented. The control of dQFL is achieved …
Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control
A defect quasi Fermi level (dQFL) control process based on above bandgap illumination
was applied to control H and V N-complexes, which are the main contributors to the …
was applied to control H and V N-complexes, which are the main contributors to the …
Properties of C‐doped GaN
Carbon‐doping in the concentration range from [C]= 5× 1017 to 1.2× 1019 cm− 3 is
employed to achieve semi‐insulating properties of GaN layers as required for electronic …
employed to achieve semi‐insulating properties of GaN layers as required for electronic …
Ge doped GaN with controllable high carrier concentration for plasmonic applications
R Kirste, MP Hoffmann, E Sachet, M Bobea… - Applied Physics …, 2013 - pubs.aip.org
Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4× 10 20
cm− 3. Low temperature luminescence spectra from the highly doped samples reveal band …
cm− 3. Low temperature luminescence spectra from the highly doped samples reveal band …
Properties of the main Mg-related acceptors in GaN from optical and structural studies
The luminescent properties of Mg-doped GaN have recently received particular attention,
eg, in the light of new theoretical calculations, where the deep 2.9 eV luminescence band …
eg, in the light of new theoretical calculations, where the deep 2.9 eV luminescence band …
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements
Compensation effects in metal organic chemical vapour deposition grown GaN doped with
magnesium are investigated with Raman spectroscopy and photoluminescence …
magnesium are investigated with Raman spectroscopy and photoluminescence …
Overcoming the compensation of acceptors in GaN: Mg by defect complex formation
ABSTRACT In GaN: Mg, the MgGa acceptor is compensated extensively by the formation of
nitrogen vacancies (VN) and Mg interstitials (Mgi). However, we show that such …
nitrogen vacancies (VN) and Mg interstitials (Mgi). However, we show that such …
Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method
We studied the structural and optical properties of state-of-the-art non-polar bulk GaN grown
by the ammonothermal method. The investigated samples have an extremely low …
by the ammonothermal method. The investigated samples have an extremely low …