Emerging designs of electronic devices in biomedicine

ML Coluccio, SA Pullano, MFM Vismara, N Coppedè… - Micromachines, 2020 - mdpi.com
A long-standing goal of nanoelectronics is the development of integrated systems to be used
in medicine as sensor, therapeutic, or theranostic devices. In this review, we examine the …

Design and analysis of INDEP FinFET SRAM cell at 7‐nm technology

U Mushtaq, VK Sharma - International journal of numerical …, 2020 - Wiley Online Library
The reduction in size of metal oxide semiconductor (MOS) devices results in increase in
leakage power dissipation, which occurs due to the short‐channel effects in subthreshold …

WITHDRAWN: SS< 30 mV/dec; Hybrid tunnel FET 3D analytical model for IoT applications

Withdrawal Notice WITHDRAWN: SS< 30 mV/dec; Hybrid tunnel FET 3D analytical model for
IoT applications Ajaykumar Dharmireddy a, Avinash Sharma b, M. Sushanth Babu c …

Squaring Circuit Using 14nmFinFET Technology with Vedic Mathematics Approach

S Shetkar, S Koli - IETE Journal of Research, 2024 - Taylor & Francis
FinFET technology is an alternative to CMOS technology as in this technology device has
higher drive current, speed, and low-power consumption. FinFET has better mobility and …

TCAD analysis of tunnel field effect transistor using Ge material for low power application

S Chander, R Chaudhary, SK Sinha - Materials Today: Proceedings, 2022 - Elsevier
Low power is important parameter for any semiconductor devices. In transistors the current
flow between source to drain through channel region is dependent upon the materials of …

Compact Modeling of Capacitance Based 14 nm Triple Gate FinFET Using Verilog-A

N Anjani Devi, T Lokesh… - … of Computational and …, 2020 - ingentaconnect.com
Technology down scaling process divulges, the unveiled short channel effects (SCEs),
which disrupts the behavior of bulk CMOS technology. In order to overcome these unveiled …