III–nitride UV devices
MA Khan, M Shatalov, HP Maruska… - Japanese journal of …, 2005 - iopscience.iop.org
The need for efficient, compact and robust solid-state UV optical sources and sensors had
stimulated the development of optical devices based on III–nitride material system. Rapid …
stimulated the development of optical devices based on III–nitride material system. Rapid …
Short-wavelength solar-blind detectors-status, prospects, and markets
M Razeghi - Proceedings of the IEEE, 2002 - ieeexplore.ieee.org
Recent advances in the research work on III-nitride semiconductors and Al/sub x/Ga/sub 1-
x/N materials in particular has renewed the interest and led to significant progress in the …
x/N materials in particular has renewed the interest and led to significant progress in the …
GaN 基紫外探测器及其研究进展
李向阳， 许金通， 汤英文， 李雪， 张燕… - Infrared and Laser …, 2006 - opticsjournal.net
摘要宽禁带半导体材料的研究和突破, 带动了各种器件的发展和应用. GaN
基紫外探测器具有通过调整材料的配比可以调节器件响应的截止波长的优点 …
基紫外探测器具有通过调整材料的配比可以调节器件响应的截止波长的优点 …
[图书][B] Handbook of nitride semiconductors and devices, GaN-based optical and electronic devices
H Morkoç - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Molecular beam epitaxy of high magnesium content single-phase wurzite MgxZn1-xO alloys (x≃ 0.5) and their application to solar-blind region photodetectors
T Takagi, H Tanaka, S Fujita… - Japanese journal of …, 2003 - iopscience.iop.org
A series of single-phase wurzite Mg x Zn 1-x O alloys from x= 0 to 0.5 were successfully
obtained by molecular beam epitaxial growth on sapphire substrates, resulting in artificial …
obtained by molecular beam epitaxial growth on sapphire substrates, resulting in artificial …
New developments in gallium nitride and the impact on power electronics
Wide bandgap III-nitride semiconductor materials possess superior material properties as
compared to silicon, GaAs and other III-V compound materials. Recent achievements in …
compared to silicon, GaAs and other III-V compound materials. Recent achievements in …
Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years
M Razeghi - IEEE Journal of Selected Topics in Quantum …, 2000 - ieeexplore.ieee.org
This paper reviews some of our pioneering contributions to the field of III-V compound
semiconductor materials and low-dimensional optoelectronic devices. These contributions …
semiconductor materials and low-dimensional optoelectronic devices. These contributions …
320× 256 solar-blind focal plane arrays based on AlxGa1− xN
R McClintock, K Mayes, A Yasan, D Shiell… - Applied Physics …, 2005 - pubs.aip.org
We report AlGaN-based backilluminated solar-blind ultraviolet focal plane arrays operating
at a wavelength of 280 nm. The electrical characteristics of the individual pixels are …
at a wavelength of 280 nm. The electrical characteristics of the individual pixels are …
[PDF][PDF] UV detectors and focal plane array imagers based on AlGaN pin photodiodes
JP Long, S Varadaraajan, J Matthews… - Optoelectronics …, 2002 - Citeseer
The successful development of both discrete UV photodiodes and large-format UV imaging
arrays consisting of 128 128 and 320 256 AlGaN pin photodiodes is reported. Detectors and …
arrays consisting of 128 128 and 320 256 AlGaN pin photodiodes is reported. Detectors and …
III-nitride UV devices
M Asif Khan, M Shatalov, HP Maruska… - Japanese journal of …, 2005 - ui.adsabs.harvard.edu
The need for efficient, compact and robust solid-state UV optical sources and sensors had
stimulated the development of optical devices based on III-nitride material system. Rapid …
stimulated the development of optical devices based on III-nitride material system. Rapid …