Reversal of Band-Ordering Leads to High Hole Mobility in Strained p-type Scandium Nitride
Low hole mobility of nitride semiconductors is a significant impediment to realizing their high-
efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band …
efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band …
Valley Hall effect in graphene-like (, Ge) buckled monolayers with high charge carrier mobility and low lattice thermal conductivity
A systematic analysis of the electronic and thermal properties of two semiconducting
monolayers, SnSi and SnGe, is conducted through the lens of density functional theory …
monolayers, SnSi and SnGe, is conducted through the lens of density functional theory …
Polar semiconducting scandium nitride as an infrared plasmon and phonon–polaritonic material
The interaction of light with collective charge oscillations, called plasmon–polariton, and with
polar lattice vibrations, called phonon–polariton, are essential for confining light at deep …
polar lattice vibrations, called phonon–polariton, are essential for confining light at deep …
Exceptionally high hole mobilities in monolayer group-IV monochalcogenides GeTe and SnTe
Two-dimensional semiconductors are considered as promising channel materials for next-
generation nanoelectronics devices, while their practical applications are typically limited by …
generation nanoelectronics devices, while their practical applications are typically limited by …
Voltage-margin limiting mechanisms of AlScN-based HEMTs
In this work, the off-state characteristics of AlScN/GaN high electron mobility transistors
(HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) were studied and …
(HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) were studied and …
Electron accumulation and distribution at interfaces of hexagonal ScxAl1− xN/GaN-and ScxAl1− xN/InN-heterostructures
Electron charges and distribution profiles induced by polarization gradients at the interfaces
of pseudomorphic, hexagonal ScxAl1− xN/GaN-and ScxAl1− xN/InN-heterostructures are …
of pseudomorphic, hexagonal ScxAl1− xN/GaN-and ScxAl1− xN/InN-heterostructures are …
Excellent thermoelectric properties of the Tl 2 S 3 monolayer for medium-temperature applications
L Zhou, Q Wang, M Xu, C Hu, X Deng, Y Li, B Lv… - Nanoscale, 2023 - pubs.rsc.org
Exploring materials with high thermoelectric (TE) performance can alleviate energy pressure
and protect the environment, and thus, TE materials have attracted extensive attention in the …
and protect the environment, and thus, TE materials have attracted extensive attention in the …
Band gaps and phonons of quasi-bulk rocksalt ScN
ScN is an emerging transition metal nitride with unique physical properties arising from the d
electrons of Sc. In this letter, we present the results of optical characterization techniques …
electrons of Sc. In this letter, we present the results of optical characterization techniques …
Flexible Near-Infrared Plasmon-Polaritons in Epitaxial Scandium Nitride Enabled by van der Waals Heteroepitaxy
Van der Waals heteroepitaxy refers to the growth of strain-and misfit-dislocation-free
epitaxial films on layered substrates or vice versa. Such heteroepitaxial technique can be …
epitaxial films on layered substrates or vice versa. Such heteroepitaxial technique can be …
[HTML][HTML] First-principles study of hydrogen-and oxygen-related complexes in ScN
Scandium nitride (ScN) is an attractive material for electronic applications due to its high n-
type conductivity. Native defects and unintentional impurities may limit its electron …
type conductivity. Native defects and unintentional impurities may limit its electron …