Progress in metal-organic chemical vapor deposition of high quality () 0001 N-polar (Al, Ga,
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …

This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …

In evaluating GaN high-electron mobility transistors (HEMTs) for high-power applications, it
is crucial to consider the device-level breakdown characteristics. This letter replaces the …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

We have successfully grown AlGaN/GaN high electron mobility transistor (HEMT) structure
on the high-quality undoped thick AlN buffer layer with large band offset to replace the …

Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …

We report on the small-signal high frequency characteristics of highly scaled graded AlGaN
channel polarization-doped field-effect transistors (PolFETs) that show constant current gain …

We report on 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors
(HEMTs) with a record current gain cutoff frequency (f T) of 400 GHz. Although the high drain …

This article presents improvements of large-signal RF power performance at Ka-band of
gallium nitride high electron mobility transistors (HEMTs) utilizing a scandium aluminum …

This paper reviews different technologies recently developed to push the performance of
GaN-based high electron mobility transistors (HEMTs) into sub-mm wave frequencies. To …