The concept of chemical mechanical planarization (CMP) was invented in IBM in the early
1980s by Klaus D. Beyer in an attempt to create a highly planar surface and enable …

Aiming at the problems of low processing efficiency and uneven material removal during
shear rheological polishing (SRP) of polycrystalline tungsten, this paper introduces the …

Chemical–mechanical planarization (CMP) of copper is a vital process to produce sub-
micron range and multilevel metallization to meet the demands of the current interconnect …

We investigated the suitability of ammonium persulfate (APS) and potassium oleate (PO)
containing silica dispersions for polishing Co interconnects based on removal and …

Corrosion inhibitors in copper slurries play a quite important role in copper chemical
mechanical polishing. Besides widely used benzotriazole (BTA), 1, 2, 4-triazole has been …

Corrosion–wear interactions play a very crucial role in developing many technological
processes. One of them is chemical–mechanical planarization (CMP) of metallic thin films for …

A colloidal silica-based slurry with H 2 O 2 (1 wt%) as the oxidizer and arginine (0.5 wt%) as
the complexing agent was found to polish cobalt (Co) with superior performance (better post …

This study compares the oxidative dissolution, passivation, and polishing behavior of copper
chemical–mechanical polishing in the presence of hydrogen peroxide, glycine, and copper …

To clarify the chemical mechanical polishing (CMP) mechanism of Cu in aqueous hydrogen
peroxide and glycine, we developed a ReaxFF reactive force field to describe the interaction …

Aiming at these problems of low efficiency, high cost, and environmental pollution in the
chemical mechanical polishing (CMP) process of single crystal SiC substrates, a dry-type …